Preparation method of gallium nitride molybdenum disulfide mixed-scale pn junction

Abstract

The present invention discloses a preparation method for nitride mixing melty -molybdenum -mo -molybdenum -mo -molybdenum -moralians. The steps include: (1) to deposit the P‑gan layer on the substrate;, Put a layer of uniform MOS on the surface of the tape 2 Sheet -shaped crystal, MOS is sticky with tape 2 The side of the sheet crystal is exposed to PDMS and pressed to make MOS 2 Moved to PDMS to form MOS 2 Film, remove the tape, and then buckle the Pögan layer of the device (1) device (1) to the PDMS and press it to make the MOS 2 The membrane is transferred to the surface of the P gan layer to make a mixed -scale PN knot of nitride molten molybdenum sulfide.The invention uses the PDMS auxiliary drying method to transfer, the operation is simple, and the production cost is low.MOS prepared by this method 2 The film size is large, and compared with the traditional mechanical stripping method, the sample substrate prepared by this method is relatively clean, which is convenient for subsequent device tests.

Description

technical field [0001] The invention relates to a method for preparing a gallium nitride molybdenum disulfide mixed-scale PN junction, belonging to the field of micro-nano electronic devices. Background technique [0002] Currently, the two-dimensional PN semiconductor heterojunction has become the research focus of basic science and applied physics. It can achieve new functions by combining the advantages of different materials, or regulate the properties of materials through efficient charge transport at the heterojunction interface. Photoelectric properties. Therefore, two-dimensional PN semiconductor heterojunctions have great prospects in practical applications in the fields of microelectronics and optoelectronics, such as photovoltaic devices, light emitters, and field-effect transistors. The built-in electric field and interlayer recombination existing in the PN junction will determine the rectification characteristics, photovoltaic effect and light detection ability...

AI Technical Summary

Problems solved by technology

The first one is to prepare n-MoS on p-GaN by traditional mechanical exfoliation method 2 , the device size is usually less than ten microns, and the yield is low

The second is to grow n-MoS directly on p-GaN by CVD synthesis 2 Films, whose size is mostly around one micron, cannot meet the requirements of the test

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