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A Multipolar Quantum Cascade Ring Laser

A technology of ring lasers and quantum cascades, applied in lasers, phonon exciters, semiconductor lasers, etc., to achieve stable spectral output, simplified device structure design, and high universality of the scheme

Active Publication Date: 2021-07-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, for a wide range of applications in the mid-infrared and terahertz fields, there is a lack of a quantum cascade structure with simple design, good tunable characteristics, multi-wavelength or wide-spectrum or frequency comb or chaotic laser output and its application.

Method used

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  • A Multipolar Quantum Cascade Ring Laser
  • A Multipolar Quantum Cascade Ring Laser
  • A Multipolar Quantum Cascade Ring Laser

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Embodiment 1

[0069] Such as figure 1 As shown, the schematic diagrams of two arrangement structures of the quantum cascade structure layer 9 in this embodiment, wherein, figure 1 The QCL stack units in (a) are all AB stacks, including the first QCL stack unit AB1, the i-th QCL stack unit AB2; the Nth QCL stack unit AB3, the quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an AB / … / AB / … / AB stack structure. figure 1 The QCL stack units in (b) are all ABB stacks, including the first QCL stack unit ABB4, the i-th QCL stack unit ABB5, and the N-th QCL stack unit ABB6. The quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an ABB / … / ABB / … / ABB stack structure.

[0070] figure 1 (a), figure 1 Each QCL stack unit in (b) only contains two kinds of QCL subunits, A and B, which are composed of an active region and an implanted region, and the implanted region only contains a section of doped region. ...

Embodiment 2

[0077] Such as image 3 As shown, in this embodiment, the QCL subunits of the quantum cascade structure layer 9 all have two doped regions. image 3 In (a), the doping concentration parameters of the two doped regions of the type A QCL subunit are the same, both being N 1 . The doping concentration parameters of the two doping regions of the B-type QCL subunit are respectively N 1 and N 2 (N 1 ≠N 2 ).

[0078] image 3 In (b), there are two sections of doping regions in the type A QCL subunit, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 2 (N 1 ≠ N 2 ). Type B QCL subunits have two sections of doping regions, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 3 (N 3 ≠ N 2 ).

[0079] same, image 3 Among them, the A and B QCL subunits are the same in other parameters except the doping concentration parameter, where other parameters include: the lay...

Embodiment 3

[0081] Such as Figure 5 As shown, it is a schematic structural diagram of the multipolar quantum cascade ring laser of the present invention, the substrate 7, the collector electrode 8, and the quantum cascade structure layer 9 are sequentially arranged along the z direction in the multipolar quantum cascade ring laser. , a quantum level matching layer 10, a base 11 and an emitter 12, and the emitter 12 is etched into a strip-shaped straight waveguide 18 and a ring waveguide 19 structure. The base 11 and the emitter 12 are arranged in steps, and the collector 8 and the quantum cascade structure layer 9 are also arranged in steps. Further, the collector electrode 8 may include a lower cladding layer, and the emitter electrode 12 may include an upper cladding layer. Specifically, the layer sequence of the device along the z direction from bottom to top is a heavy n-doped substrate 7, an n-doped collector 8, a quantum cascade structure layer 9, a quantum energy level matching l...

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Abstract

The invention discloses a multipolar quantum cascade ring laser, which comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, a base, an emitter, and an emitter sequentially arranged from bottom to top There is a step-like setting between the base and the quantum cascade structure layer and the collector; the laser also includes a collector electrode set on the top of the collector or under the substrate, a base electrode set on the top of the base, The emitter electrode placed on top of the emitter. A ring waveguide and a strip straight waveguide coupled with the ring waveguide are also etched on the laser. The multipolar quantum cascade ring laser has simple design, good tunable characteristics, multi-wavelength or wide-spectrum or chaotic laser or frequency comb output, and can effectively reduce the mid-infrared and terahertz sources in a wide range of mid-infrared and terahertz applications. application cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a multipolar quantum cascade ring laser. Background technique [0002] Compared with the stimulated radiation transfer mechanism between the conduction band and the valence band of traditional quantum well lasers, quantum cascade lasers (Quantum Cascade Lasers, QCLs) have a unique cascade mechanism of transfer between subbands in the conduction band Instead, mid-infrared and terahertz band outputs can be generated directly. Compared with the existing mid-infrared and terahertz output generation methods, such as photoconductive mixing method, semiconductor built-in electric field method, optical rectification method, electro-optic sampling method, etc., the mid-infrared and terahertz output structure based on QCLs has conversion efficiency High, simple cavity structure, good on-chip integration, etc., are widely used in many civil and military applications including ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34H01S5/10
CPCH01S5/1071H01S5/3401
Inventor 王卓然张鹏年袁国慧林志远
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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