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A three-terminal s-type ring quantum cascade laser

A quantum cascade and laser technology, applied to lasers, phonon exciters, laser components, etc., to achieve the effect of high universality and simplified device structure design

Active Publication Date: 2021-05-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At present, for a wide range of applications in the mid-infrared and terahertz fields, there is a lack of a quantum cascade structure with simple design, good tunable characteristics, multi-wavelength or wide-spectrum or frequency comb or chaotic laser output and its application.

Method used

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  • A three-terminal s-type ring quantum cascade laser
  • A three-terminal s-type ring quantum cascade laser
  • A three-terminal s-type ring quantum cascade laser

Examples

Experimental program
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Embodiment 1

[0064] Such as figure 1 As shown, the schematic diagrams of two arrangement structures of the quantum cascade structure layer 9 in this embodiment, wherein, figure 1 The QCL stack units in (a) are all AB stacks, including the first QCL stack unit AB1, the i-th QCL stack unit AB2; the Nth QCL stack unit AB3, the quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an AB / … / AB / … / AB stack structure. figure 1 The QCL stack units in (b) are all ABB stacks, including the first QCL stack unit ABB4, the i-th QCL stack unit ABB5, and the N-th QCL stack unit ABB6. The quantum cascade structure layer 9 consists of N aforementioned QCL stacks Units are stacked to form an ABB / … / ABB / … / ABB stack structure.

[0065] figure 1 (a), figure 1 Each QCL stack unit in (b) only contains two types of QCL subunits, A and B, and the two types of QCL subunits are composed of active regions and implanted regions, and the implanted regions only contain...

Embodiment 2

[0072] Such as image 3 As shown, in this embodiment, the QCL subunits of the quantum cascade structure layer 9 all have two doped regions. image 3 In (a), the doping concentration parameters of the two doped regions of the type A QCL subunit are the same, both being N 1 . The doping concentration parameters of the two doped regions of the B-type QCL subunit are N 1 and N 2 (N 1 ≠ N 2 ).

[0073] image 3 In (b), there are two sections of doping regions in the type A QCL subunit, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 2 (N 1 ≠ N 2 ). Type B QCL subunits have two sections of doping regions, and the doping concentration parameters of the two sections of doping regions are respectively N 1 and N 3 (N 3 ≠ N 2 ).

[0074] same, image 3 (a) In (b), the two QCL subunits of A and B are the same on other parameters except the doping concentration parameter, where other parameters include: layer thickne...

Embodiment 3

[0076] Such as Figure 5 As shown, it is a structural schematic diagram of a three-terminal S-shaped ring quantum cascade laser of the present invention. The three-terminal S-shaped ring quantum cascade laser is sequentially arranged along the z direction from bottom to top. Substrate 7, collector 8, quantum level The structure layer 9, the quantum energy level matching layer 10, the base 11 and the emitter 12 are etched into a strip-shaped straight waveguide 18 and an S-shaped ring waveguide 19 structure. The base electrode 11 and the emitter electrode 12 are arranged in a ladder shape, and the collector electrode 8 and the quantum cascade structure layer 9 are also arranged in a ladder shape. Further, the collector electrode 8 may include a lower cladding layer, and the emitter electrode 12 may include an upper cladding layer. Specifically, the layer sequence of the device along the z direction from bottom to top is a heavy n-doped substrate 7, an n-doped collector 8, a quan...

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Abstract

The invention discloses a three-terminal S-shaped annular quantum cascade laser, which comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, a base, and an emitter arranged sequentially from bottom to top. Between the emitter and the base, between the quantum cascade structure layer and the collector, there is a step-like arrangement; the laser also includes a collector electrode arranged on the top of the collector or under the substrate, and a base electrode arranged on the top of the base Electrode, the emitter electrode arranged on top of the emitter. The laser is also etched with an S-shaped ring waveguide and a strip-shaped straight waveguide coupled with the S-shaped ring waveguide. The strip-shaped straight waveguide includes an input section and a coupling section. The three-terminal S-shaped ring quantum cascade laser has simple design, good tunable characteristics, multi-wavelength or wide-spectrum or chaotic laser or frequency comb output, and can effectively reduce mid-infrared and terahertz applications in a wide range of mid-infrared and terahertz applications. The application cost of the source.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, in particular to a three-terminal S-shaped ring quantum cascade laser. Background technique [0002] Compared with the stimulated radiation transfer mechanism between the conduction band and the valence band of traditional quantum well lasers, quantum cascade lasers (Quantum Cascade Lasers, QCLs) have a unique cascade mechanism of transfer between subbands in the conduction band Instead, mid-infrared and terahertz band outputs can be generated directly. Compared with the existing mid-infrared and terahertz output generation methods, such as photoconductive mixing method, semiconductor built-in electric field method, optical rectification method, electro-optic sampling method, etc., the mid-infrared and terahertz output structure based on QCLs has conversion efficiency High, simple cavity structure, good on-chip integration, etc., are widely used in many civil and military applicatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34H01S5/042H01S5/20H01S5/22H01S5/30
CPCH01S5/0425H01S5/20H01S5/22H01S5/3086H01S5/34H01S5/3401
Inventor 袁国慧王卓然林志远张鹏年
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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