Ion etcher reaction chamber cleaning method

Abstract

The invention provides an ion etcher reaction chamber cleaning method. The method comprises the following steps that (1) argon and oxygen are introduced into a reaction chamber, the vacuum degree of the ion etcher reaction chamber is kept to be 300-400 Pa, radio frequency glowing is conducted for the first time, the radio frequency of the cathode is 60-120 KHZ, and the radio frequency of the anodeis 26-28 MHZ; and (2) argon and oxygen are continued to be introduced into the reaction chamber, the pressure intensity in the reaction chamber is adjusted and kept to be 200-400 Pa, radio frequencyglowing is conducted for the second time, the radio frequency of the cathode is 13.56 MHZ, the radio frequency of the anode is 2-3 GHZ, then operation is finished, and cleaning is completed. Accordingto the method, cleaning operation is easy, the function of an ion etcher itself is utilized for cleaning, the ion etcher does not need to be disassembled, in addition, the cleaning effect of the method is good, and the effect that the cleaning and maintenance period under normal operation of an instrument is long is guaranteed.

Description

technical field [0001] The invention relates to a process for cleaning semiconductor silicon chip processing equipment, in particular to a method for cleaning a reaction chamber of an ion etching machine. Background technique [0002] In the field of microelectronics, semiconductor components and silicon wafers are usually ion-etched in an ion etching machine, and the chemical and physical conditions remaining in the etching reaction chamber will be very different, and will exist for a long time when the equipment is stopped. , thus affecting the subsequent ion etching process. Therefore, the reaction chamber should be cleaned regularly. Usually, the cleaning method is to close the machine, remove the internal baffle, and perform sand blasting. The disadvantage of this method is that the operation of the machine is unstable, and the sand blasting process usually causes secondary pollution inside the machine, which affects its cleaning effect. Contents of the invention ...

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the operation of the machine is unstable, and the sand blasting process usually causes secondary pollution inside the machine, which affects its cleaning effect.