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Etching method of sic substrate

A substrate and by-product technology, applied in the field of SiC substrate etching, can solve the problems of increasing the difficulty and workload of production and maintenance, and affecting the yield of products, so as to prolong the cleaning and maintenance cycle, reduce the difficulty and workload of maintenance, Possible effect of reducing deposition

Active Publication Date: 2022-05-27
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the normal production process, it is necessary to stop production every time a few to a dozen pieces are etched, and clean and maintain the by-products inside the reaction chamber, otherwise it will affect the product yield and greatly increase the difficulty and workload of production maintenance

Method used

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  • Etching method of sic substrate
  • Etching method of sic substrate

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Embodiment

[0039] figure 2 A flowchart showing a method of etching a SiC substrate according to an exemplary embodiment of the present invention. The etching method of the SiC substrate alternately performs the etching step and the by-product discharge step, in the etching step, the SiC substrate provided in the reaction chamber is etched; in the by-product discharge step, the reaction in the reaction chamber is discharged The processes of the by-product, etching step and by-product discharge step are as follows:

[0040] Etching steps: 10mT / SRF 1600W / BRF 700W / 100SF 6 +30O 2 +20Ar / 10s, that is, the pressure of the reaction chamber is 10mT, the RF power of the upper electrode is 1600W, the RF power of the lower electrode is 700W, and the flow rate of the process gas is sulfur hexafluoride (SF 6 ) 100sccm, oxygen (O 2 ) 30sccm, argon (Ar) 20sccm, the duration is 10s;

[0041] By-product discharge steps: 10mT / SRF 1600W / BRF 0W / 150Ar / 1s, that is, the pressure of the reaction chamber is ...

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Abstract

An etching method for a SiC substrate, the etching is carried out in a reaction chamber, the etching method alternately performs an etching step and a by-product discharge step; in the etching step, the SiC substrate disposed in the reaction chamber is etched ; In the by-product discharge step, the reaction by-products in the reaction chamber are discharged. The etching method can reduce the possibility of deposition of reaction by-products on the side wall of the reaction chamber and the surface of the dielectric window, greatly extend the cleaning and maintenance period of the equipment, and reduce the maintenance difficulty and workload of the equipment.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an etching method for a SiC substrate. Background technique [0002] With the continuous advancement of communication technology, the application of GaN-based HEMT microwave power devices is gradually increasing. The schematic diagram of the GaN-based HEMT device structure is shown in figure 1 As shown, it grows a GaN-based AlGaN / GaN layer on a SiC substrate to prepare a GaN-based device structure. The manufacturing process of GaN-based HEMT microwave power devices includes two types: the front process and the back process. The front process is mainly to form the core functional part of the device, and the back process is mainly to etch the through hole 2 on the SiC substrate 3, and the metal lead wire Connected to the GaN device on the front, the obtained GaN-based HEMT microwave power device is as figure 1 As shown, it includes a deposited metal 4 , a SiC...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
CPCH01L21/30655
Inventor 刘海鹰
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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