Light-emitting diode based on N-type doped stack and functional layer
A technology of light-emitting diodes and doped layers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems affecting the luminous efficiency of light-emitting diodes, and achieve the effect of improving luminous efficiency and hole concentration
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[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0029] See figure 1 , figure 1 A schematic structural diagram of a light-emitting diode based on an N-type doped stack and a functional layer provided by an embodiment of the present invention. An embodiment of the present invention provides a light-emitting diode based on an N-type doped stack and a functional layer, the light-emitting diode comprising:
[0030] substrate layer 11;
[0031] Specifically, the material of the substrate layer 11 may be sapphire, silicon, silicon carbide, zinc oxide, gallium nitride, aluminum nitride or other materials suitable for crystal epitaxial growth.
[0032] The buffer layer 12 is located on the substrate layer 11;
[0033] Further, the material of the buffer layer 12 is GaN.
[0034] In the ...
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