Polymer, organic film composition, and method for forming pattern

A technology of polymer and composition, applied in opto-mechanical equipment, photo-engraving process of pattern surface, photosensitive material for opto-mechanical equipment, etc. The effect of etching resistance

Pending Publication Date: 2020-06-16
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Recently, as the size of the pattern that needs to be formed decreases, it is difficult to form a fine pattern with excellent profile only by the above-mentioned typical photolithography technique

Method used

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  • Polymer, organic film composition, and method for forming pattern
  • Polymer, organic film composition, and method for forming pattern
  • Polymer, organic film composition, and method for forming pattern

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0105] 28.4g (0.10mol) of 1,2,3,4-benzenetetramine tetrahydrochloride (1,2 ,3,4-benzonetetraminetetrahydrochloride), 40.6g (0.10mol) of 4,4'-(9H-fluorene-9-ylidene)bisbenzoic acid (4,4'-(9H-fluorene-9-ylidene)bisbenzoic acid ) and 300 g of polyphosphoric acid (polyphosphoric acid), and then stirred at 150° C. for 24 hours to 48 hours to perform a polymerization reaction. The reaction was completed at a weight average molecular weight of 1,000 to 5,000. After the polymerization reaction was completed, the reactant was slowly cooled at normal temperature, and then the above reactant was neutralized with a 1M NaOH solution, and the resulting solid was filtered. After washing with distilled water, ethanol and diethyl ether in sequence, the compound represented by Chemical Formula 2-1 (MW: 2100) was obtained after drying.

[0106] [chemical formula 2-1]

[0107]

Synthetic example 2

[0109] 21.3g (0.10mol) of 2,4-diamino-1,3-benzenedithiol dihydrochloride (2,4-diamino-1,3-benzenediol dihydrochloride ), 40.6g (0.10mol) of 4,4'-(9H-fluorene-9-ylidene)bisbenzoic acid (4,4'-(9H-fluorene-9-ylidene)bisbenzoic acid) and polyphosphoric acid (polyphosphoric acid) 300 g, after that, the polymer (MW: 2300) represented by Chemical Formula 2-2 was obtained through the same synthesis process as in Synthesis Example 1.

[0110] [chemical formula 2-2]

[0111]

Synthetic example 3

[0113] 24.5g (0.10mol) of 2,4-diamino-1,3-benzenedithiol dihydrochloride (2,4-diamino-1,3-benzenedithiol dihydrochloride ), 40.6g (0.10mol) of 4,4'-(9H-fluorene-9-ylidene)bisbenzoic acid (4,4'-(9H-fluorene-9-ylidene)bisbenzoic acid) and 300g of polyphosphoric acid (polyphosphoric acid), and then through the same synthesis process as in Synthesis Example 1, the polymer (MW: 2000) represented by Chemical Formula 2-3 was obtained.

[0114] [chemical formula 2-3]

[0115]

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PUM

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Abstract

The present invention relates to: a polymer comprising a moiety represented by the following chemical formula 1; an organic film composition comprising the polymer; and a method for forming a patternby using the organic film composition. [Chemical Formula 1] In chemical formula 1, X and Y are respectively and independently a five-membered ring group containing at least one hetero atom.

Description

technical field [0001] The present invention relates to a novel polymer, an organic film composition comprising the above polymer, and a pattern forming method using the above organic film composition. Background technique [0002] Today's semiconductor industry has progressed from a pattern with a size of several hundred nanometers to an ultra-fine technology with a pattern with a size of several nanometers to tens of nanometers. To realize such ultra-fine technology, efficient photolithography technology is indispensable. [0003] A typical photolithography technique includes the following processes: forming a material layer on a semiconductor substrate, coating a photoresist layer on the material layer, exposing and developing to form a photoresist pattern, and then using the photoresist pattern as a mask The layer of material is etched. [0004] Recently, as the size of patterns that need to be formed is reduced, it is difficult to form fine patterns with excellent pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12C08G61/10H01L21/027H01L21/033H01L21/02G03F7/09
CPCC08G61/10C08G61/12G03F7/09H01L21/02H01L21/027H01L21/033C08G61/123H01L21/0274H01L21/0337H01L21/02282G03F7/091
Inventor 林栽范
Owner SAMSUNG SDI CO LTD
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