Process for horizontal coating of intrinsic silicon based on LPCVD technique

Abstract

The invention provides a process for horizontal coating of intrinsic silicon based on an LPCVD technique. The process comprises the steps that oxidized intrinsic silicon is horizontally placed in quartz boats spaced from each other by a certain distance back to back, a furnace body is sealed, the temperature is increased, silicane is guided into the furnace body for a reaction, and nitrogen is guided into the furnace body to repel a precursor; the temperature is decreased, and the pressure returns; and the quartz boats containing silicon wafers are pulled out of a furnace tube. According to the process for horizontal coating of the intrinsic silicon based on the LPCVD technique, a horizontal wafer-insertion coating process is adopted, and compared with vertical coating, gas turbulence in the tube can be reduced, and the coating uniformity in the wafers is guaranteed; and the wafers are horizontally inserted and are horizontally overlapped by means of gravity, so that the wafers are arranged stably, the disturbance of high temperature, air flow and vibrations on the horizontally-inserted silicon wafers is small, and slight raydent coating is generated on the back sides of the silicon wafers by the air flow.

Description

technical field [0001] The invention relates to the field of crystalline silicon solar cell manufacturing, in particular to a silicon wafer coating process based on low-pressure vapor deposition technology in the crystalline silicon solar cell manufacturing process. Background technique [0002] With the development of crystalline silicon solar cell technology, the cell efficiency is getting closer and closer to the theoretical and practical limits. In the traditional cell structure, there is a serious recombination of metal and semiconductor contact areas, which has become an important factor restricting the development of crystalline silicon solar cell efficiency. As a feasible solution to reduce contact recombination loss, passivated contact technology can greatly improve the efficiency of crystalline silicon solar cells, and is being paid close attention by researchers. Theoretically, a passivation contact structure is formed on the semiconductor surface, which has dual...

AI Technical Summary

Problems solved by technology

However, in the traditional LPCVD-based coating technology, silicon wafers are vertically inserted, such as figure 1 As shown, in the context of the increasing size of silicon wafers in the current crystalline silicon solar cell industry, the vertical insertion method presents many inconveniences. First of all, the current insertion boat tooth spacing is 2.38mm. After the size of silicon wafers increases, The uppermost area is prone to lapping, resulting in gas turbulence and uneven coating; secondly, in the case of back-to-back inserting, it is easy to produce winding plating, which will increase the burden on the subsequent winding plating process

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