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Device and method for measuring thermal resistance of MOSFET power module

A technology of power modules and monitoring modules, which is applied in measuring devices, measuring resistance/reactance/impedance, measuring electricity, etc., can solve the problems of wrong junction temperature and thermal resistance test results, and solve the problem that thermal resistance cannot be measured and the test principle is simple , the effect of simple implementation method

Pending Publication Date: 2020-06-09
CHINA ELECTRONICS STANDARDIZATION INST +1
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Problems solved by technology

However, due to the working principle of the module, the current only passes through the anti-parallel freewheeling diode and does not flow through the MOSFET in the reverse direction, so the junction voltage measured in the reverse direction will be the antiparallel freewheeling diode instead of the parasitic body diode of the MOSFET. Finally, the junction temperature and thermal resistance test results are wrong

Method used

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  • Device and method for measuring thermal resistance of MOSFET power module
  • Device and method for measuring thermal resistance of MOSFET power module
  • Device and method for measuring thermal resistance of MOSFET power module

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Embodiment 1

[0039] 1) Construction of junction temperature measurement system

[0040] figure 1 It is a schematic diagram of the basic principle of thermal resistance measurement of the MOSFET power module built in this embodiment, mainly including: grid voltage module, pulse module, power module, high temperature box and temperature control platform with compression spring thermocouple. Among them, the grid voltage power supply of the grid voltage module provides V for the DUT GS Make it work in the conduction state; monitor the I of the module F The constant current source provides a small current I to the DUT in the high temperature box F and monitor V F , to judge whether the DUT temperature is stable; the signal source of the pulse module provides the DUT with a narrow pulse voltage V DS , and monitor its I with an oscilloscope DS ;The power supply of the power module provides power to the DUT when it is working normally; the high temperature box is used to establish V DS -I D...

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Abstract

The invention discloses a device and method for measuring thermal resistance of an MOSFET power module, and belongs to the technical field of semiconductor device thermal resistance measuring. A drain-source voltage (VDS) and a drain-source current (IDS) of an MOSFET saturation region in the MOSFET power module are mainly used as temperature-sensitive parameters to measure junction temperature (TJ) of the MOSFET power module. The method comprises the following steps: firstly, establishing a three-dimensional relation curve cluster of VDS-IDS-TJ during a thermal resistance test of the MOSFET power module; comparing the three-dimensional relation curve cluster through the VDS and the IDS applied when the device works normally to obtain the TJ of the module; meanwhile, collecting casing temperature (TC) through a pressure spring type thermocouple; and finally, calculating the thermal resistance of the module through a theoretical formula. According to the method, the problem that the junction temperature of the MOSFET and the thermal resistance of the module cannot be measured due to the existence of an anti-parallel freewheel diode in the MOSFET power module is effectively solved.

Description

technical field [0001] The invention belongs to the technical field of thermal resistance measurement of semiconductor devices, and particularly relates to a device and method for measuring the thermal resistance of a MOSFET power module. The method effectively measures the junction temperature of the main heat source MOSFET in the MOSFET power module, and then obtains the thermal resistance of the module. resistance. Background technique [0002] Due to the requirements for current capacity in engineering, MOSFETs are often packaged with anti-parallel freewheeling diodes to form MOSFET power modules. The principle of MOSFET power modules makes the current only pass through antiparallel freewheeling diodes and not through MOSFETs in reverse. The thermal resistance of a conventional MOSFET is heated in the forward direction, and the junction voltage of the parasitic body diode is measured in the reverse direction to obtain its temperature-sensitive parameters and junction tem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R27/02
CPCG01R27/02G01R31/2601
Inventor 吕贤亮黄东巍郭春生王宝友张玉芹周钦沅高立闫美存赵雅君侯小利
Owner CHINA ELECTRONICS STANDARDIZATION INST
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