Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Data read-write method and device and dynamic random access memory

A data read and write, dynamic random technology, applied in the field of memory, can solve the problems of small read and write length of memory, limited read and write rate, etc., to reduce the data read and write time, improve the read and write rate, and reduce the number of triggers.

Active Publication Date: 2020-06-05
CHANGXIN MEMORY TECH INC
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for reading and writing data, a device for reading and writing and a dynamic random access memory, so as to solve the problems in the related art that the read and write length of the memory is small and the read and write rate is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data read-write method and device and dynamic random access memory
  • Data read-write method and device and dynamic random access memory
  • Data read-write method and device and dynamic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0041] Such as figure 1 As shown, most of the current system-on-chips use the AXI interface as an interface for direct memory access (DMA, DirectMemory Access) to access dynamic random access memory (DRAM, Dynamic Random Access Memory). For example, GPU / VEDIE / DISPLAY accesses DRAM through the AXI interface. The bit width (axi_size) of the data in the corresponding AXI command is usually 256bit, and the length of the data is u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a data read-write method, a read-write device and a dynamic random access memory. The method includes: entering a page read-write mode according to a mode selection command, wherein the page read-write mode command is configured through a mode register of the dynamic random access memory; receiving page read-write commands, wherein the page read-write commands comprise a page read-write enable command and a cross read command, the page read-write enable command is configured through a first reserved bit of a read-write command of the dynamic random access memory, the cross read command is configured through a second reserved bit of the read-write command of the dynamic random access memory, and the cross read command is used for controlling cross read-write data in aplurality of storage block groups; and executing cross page read-write operation according to the page read-write command.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a data reading and writing method, a reading and writing device and a dynamic random access memory. Background technique [0002] With the rapid development of memory, people expect the memory to provide faster and faster read and write rates and lower and lower power consumption. [0003] Generally, the data required by the command to access the memory is often large, but the read and write length supported by the current memory is small, so processing a single access data requires sending multiple read and write instructions to complete, and the read and write speed is limited. In addition, when each read and write command is sent, various processing circuits inside the memory are flipping, and the power consumption is high, resulting in a large power consumption of the entire memory. [0004] It should be noted that the information disclosed in the above background technology ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06
CPCG06F12/0646
Inventor 邓升成
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com