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Data reading and writing method, reading and writing device and dynamic random access memory

一种动态随机、数据读写的技术，应用在存储器领域，达到触发次数减少、降低数据读写时间、提高读写速率的效果

Active Publication Date: 2022-01-28
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a data reading and writing method to solve one or more problems existing in the existing reading and writing methods

Method used

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  • Data reading and writing method, reading and writing device and dynamic random access memory
  • Data reading and writing method, reading and writing device and dynamic random access memory
  • Data reading and writing method, reading and writing device and dynamic random access memory

Examples

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Embodiment Construction

[0045] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0046] like figure 1 As shown, most of the current system-on-chips use the AXI interface as the interface for direct memory access (DMA, DirectMemory Access) to access dynamic random access memory (DRAM, Dynamic Random Access Memory), for example, GPU / VEDIE / DISPLAY accesses DRAM through the AXI interface, The bit width (axi_size) of the data in the corresponding AXI command is usually 256bit, and the length of the data is usu...

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PUM

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Abstract

The present invention provides a data reading and writing method, a reading and writing device and a DRAM. The reading and writing method includes: entering a page reading and writing mode, and the page reading and writing mode is configured through a reserved bit in a mode register of the DRAM . A page read / write command is received, including a page read / write enable command, and the page read / write enable command is configured through a reserved bit of the read / write command of the DRAM. Perform page read and write operations according to the page read and write commands. The reading and writing method of the present invention enables each reading and writing command to read and write a large amount of data, reduces the number of times of sending the reading and writing commands, improves the reading and writing speed, and reduces power consumption.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method for reading and writing data, and also relates to a device for reading and writing data and a dynamic random access memory. Background technique [0002] With the rapid development of memory, people expect the memory to provide faster and faster read and write rates and lower and lower power consumption. [0003] Generally, the data required by the command to access the memory is often large, but the read and write length supported by the current memory is small, so processing a single access data requires sending multiple read and write instructions to complete, and the read and write speed is limited. In addition, when each read and write command is sent, various processing circuits inside the memory are flipping, and the power consumption is high, resulting in a large power consumption of the entire memory. [0004] It should be noted that the information disclosed in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/0638G06F3/0673G11C11/409G11C11/4096G06F12/06G06F2212/70
Inventor 邓升成
Owner CHANGXIN MEMORY TECH INC
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