Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Zigzag electrode and method for improving performance of nano ultraviolet detector

A UV detector, sawtooth technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of incompatibility between the performance of metal electrodes and process steps

Active Publication Date: 2020-06-02
BEIJING UNIV OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a sawtooth electrode and a method for improving the performance of nano-ultraviolet detectors, which solves the problem of incompatibility between metal electrode performance and process steps

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zigzag electrode and method for improving performance of nano ultraviolet detector
  • Zigzag electrode and method for improving performance of nano ultraviolet detector
  • Zigzag electrode and method for improving performance of nano ultraviolet detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0097] Using electron beam direct writing technology or laser direct writing technology, a lithography plate is prepared according to the layout, and the shape of the layout is the shape of a sawtooth electrode.

[0098] The surface of the silicon (Si) wafer is oxidized by a high-temperature oxidation method to form SiO with a thickness of 300 nm 2 Layer with silicon dioxide (SiO 2 ) Layer of Si as the electrode substrate, SiO 2 The layer is an insulating isolation layer.

[0099] First, use acetone to clean the electrode substrate twice, then use ethanol to clean the electrode substrate twice, and finally use deionized water to clean the electrode substrate twice. Cover the lithography plate on the cleaned electrode substrate, and use ultraviolet lithography technology to lithographically publish the picture on the electrode substrate.

[0100] Use radio frequency magnetron sputtering method to sputter a zinc oxide seed layer with a thickness of 95 nm on the lithographic layout, and...

Embodiment approach 2

[0108] Using electron beam direct writing technology or laser direct writing technology, a lithography plate is prepared according to the layout, and the shape of the layout is the shape of a sawtooth electrode.

[0109] The surface of the silicon (Si) wafer is oxidized by a high-temperature oxidation method to form SiO with a thickness of 300 nm 2 Layer with silicon dioxide (SiO 2 ) Layer of Si as the electrode substrate, SiO 2 The layer is an insulating isolation layer.

[0110] First, use acetone to clean the electrode substrate twice, then use ethanol to clean the electrode substrate twice, and finally use deionized water to clean the electrode substrate twice. Cover the lithography plate on the cleaned electrode substrate, and use ultraviolet lithography technology to lithographically publish the picture on the electrode substrate.

[0111] Use the radio frequency magnetron sputtering method to sputter a zinc oxide seed layer with a thickness of 115 nm on the lithographic layout...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Lengthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a zigzag electrode and a method for improving the performance of a nano ultraviolet detector, and relates to the technical field of semiconductors. The shape of a sawtooth-shaped electrode is composed of two symmetrically-arranged patterns. Each pattern is composed of a rectangle and a plurality of isosceles trapezoids, the lower bottom edges of the isosceles trapezoids areconnected with the same long edge of the rectangle, and the opposite edges of the two patterns are the edges where the isosceles trapezoids are located. The isosceles edges and the upper bottom edgesof the isosceles trapezoids are used for growing nanowires; and the nanowires grown on the upper bottom edges of the two isosceles trapezoids of which the opposite sides of the two patterns are symmetrical are bridged. According to the invention, the opposite sides of two patterns of a zigzag electrode shape are formed by a plurality of repeated isosceles trapezoids; the nanowires grown on the sawtooth-shaped electrode seed layer only form effective bridging on the upper bottom edge of the isosceles trapezoid, redundant nanowires do not need to be removed after the nanowires are grown, the number of nanowire bridging and process steps are reduced, and the response speed and optical gain of the nano ultraviolet detector are improved.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a sawtooth electrode and a method for improving the performance of a nano ultraviolet detector. Background technique [0002] Ultraviolet detectors are one of the indispensable devices in the fields of environmental monitoring, ultraviolet communications, life sciences, missile guidance, and early warning. The use of nanostructured materials can greatly improve the performance of the device. At present, most of the research on UV detectors focuses on the materials and performance of the detectors. Taking the third-generation wide-bandgap semiconductor material ZnO as an example, there have been studies on the preparation of single ZnO nanowire UV detectors by using electron beam lithography to deposit electronic contacts, compared with the undoped MSM prepared by Wang Yi et al. Type zinc oxide thin film ultraviolet detector, the gain of single ZnO nanowire ultraviolet detecto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0224H01L31/108
CPCH01L31/022408H01L31/1085H01L31/0224H01L31/09H01L31/035227H01L31/1828H01L27/14601
Inventor 高志远陆利伟赵立欢邹德恕
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com