Plating device

An electroplating device and catholyte technology, which is applied in current insulation devices, electrophoretic plating, plating baths, etc., can solve the problems of difficulty in controlling the electric field and the uniformity of the electrolyte, so as to improve the electroplating rate, improve the uniformity, improve the The effect of traffic

Active Publication Date: 2021-12-28
ACM RES SHANGHAI
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, once the electrolyte flow is increased, it is difficult to control the uniformity of the electric field and electrolyte flow across the substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plating device
  • Plating device
  • Plating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] refer to Figure 1 to Figure 7 As shown, an electroplating device according to an exemplary embodiment of the present invention is disclosed. The electroplating device includes a process chamber 10 . The process chamber 10 is supported by a susceptor 20 . The process chamber 10 is divided into an anode chamber 11 and a cathode chamber 12 . The anode cavity 11 and the cathode cavity 12 are separated by a membrane 13 fixed on a membrane frame 14 .

[0035] The anode cavity 11 is divided into a plurality of anode regions 111 and every two adjacent anode regions 111 are separated by partition walls 112 arranged vertically. The material of the partition wall 112 can be selected from non-conductive and chemically resistant plastics. Partition wall 112 separates the electric field and confines the electrolyte fluid field. In one embodiment, by way of example, without limiting the invention, the anode cavity 11 is divided into two anode regions 111 . Each anode area 111 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an electroplating device for depositing metal on a substrate. The electroplating device includes a membrane frame (14), a catholyte liquid inlet pipe (30) and a central cap (40). The membrane frame (14) has a central channel (144) through the center of the membrane frame (14). The catholyte inlet pipe (30) is connected with the central channel (144) of the membrane frame (14). The central cap (40) is fixed at the center of the membrane frame (14) and covers the central channel (144) of the membrane frame (14). The top of the central cap (40) is provided with a plurality of first holes (42). The catholyte liquid inlet pipe (30) supplies the catholyte to the center cap (40) through the central channel (144) of the membrane holder (14), and the catholyte is supplied to the central area of ​​the substrate.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit manufacturing equipment, and more particularly, to an electroplating device for metal deposition. Background technique [0002] In semiconductor manufacturing, electroplating is a common method for depositing thin metal films on substrates. Especially in advanced packaging technology, because electroplating has the advantages of simple process, low cost, and easy mass production, etc., electroplating is generally used to form copper pillars and solder bumps on the substrate to realize chip substrate interconnection. Unfortunately, the electroplating equipment currently on the market generally has the defect of low electroplating rate. Low plating rate means low production efficiency, which is unacceptable to semiconductor companies. For semiconductor companies, the largest investment cost comes from a large number of manufacturing equipment. Therefore, how to optimize equipment prod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C25D5/08H01L21/67
CPCC25D17/008C25D5/08C25D17/001C25D17/002C25D17/02C25D17/10C25D17/12C25D21/10C25D21/12C25D13/22C25D17/06
Inventor 贾照伟杨宏超陆陈华王坚王晖
Owner ACM RES SHANGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products