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Circuit for dynamically suppressing turn-off overvoltage of power semiconductor device

A power semiconductor and overvoltage technology, which is applied in emergency protection circuit devices, circuit devices, emergency protection circuit devices, etc. for limiting overcurrent/overvoltage, can solve problems such as complex circuit structure design, and achieve good temperature stability , good effect of pressure resistance

Inactive Publication Date: 2020-04-17
ANHUI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its advantages are fast response speed and wide adjustment range, but the circuit structure design is more complicated

Method used

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  • Circuit for dynamically suppressing turn-off overvoltage of power semiconductor device

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Effect test

Embodiment Construction

[0015] The present invention is further explained below by specific embodiment:

[0016] This circuit is composed of capacitors, resistors, diodes, and transistors. Resistors R1, R2, and R3 provide static operating points for transistor Q. When the circuit is in a steady state, the base voltage of the transistor Q is 0V, the transistor Q is off, and there is no power consumption. When the power semiconductor IGBT is turned off, the inductive load generates an overvoltage at the collector of the power semiconductor IGBT. This overvoltage raises the base voltage of the transistor Q through the capacitor C1, so that the transistor Q enters the conduction state, and discharges the induced current formed by the induced electromotive force of the inductive load.

[0017] The turn-on time of the transistor Q is determined by the size of the capacitor C1 and the absorbing resistors R2 and R3, so the turn-on and turn-off time of the transistor Q can be reasonably set to suppress the v...

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Abstract

The invention relates to the field of switching overvoltage protection of power semiconductor devices, in particular to a circuit for dynamically suppressing turn-off overvoltage of a power semiconductor device. The invention aims to provide a method for dynamically suppressing turn-off overvoltage of a power semiconductor device, thereby protecting the power semiconductor device and ensuring normal operation of a switching circuit. According to the method, an overvoltage protection circuit is composed of a capacitor, a resistor, a diode and a transistor, the capacitor is charged through overvoltage generated at the two ends when an IGBT is turned off, and a pulse is provided for conduction of the transistor so that a transistor Q can be conducted. After the transistor Q is conducted, an induced current is discharged. The circuit is high in response speed, simple in circuit design, low in cost, capable of solving the problem that a passive circuit is not high in overvoltage suppressionprecision, high in circuit working speed and good in suppression effect. The circuit for dynamically suppressing turn-off overvoltage of the power semiconductor device adopts a low-cost device to achieve a better inhibition effect, and the social benefit and economic benefit of the circuit are greatly improved.

Description

technical field [0001] The invention relates to the field of overvoltage protection for switches of power semiconductor devices, in particular to a circuit for dynamically suppressing the turn-off overvoltage of power semiconductor devices. Background technique [0002] As the country pays more and more attention to the promotion of green energy policies, the use of clean energy and improvement of utilization efficiency have become the benchmarks of the semiconductor industry. In particular, power semiconductor devices widely used in wind power, hydropower, electric vehicles, and home appliances have become a research hotspot. Power semiconductor devices connect the connection between strong electricity and weak electricity, and play a vital role in the development of power electronic devices and integrated circuits. However, if the insulated gate bipolar transistor IGBT and metal oxide field effect transistor MOSFET will generate overvoltage when they are turned off, exces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04
CPCH02H9/045
Inventor 蔡俊陈程王文焕刘国巍
Owner ANHUI UNIV OF SCI & TECH
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