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Preparation method of quantum dots

A quantum dot, molar mass technology, applied in chemical instruments and methods, nanotechnology, nano-optics, etc., can solve the problems of lattice stress and lattice defects, affecting fluorescence intensity, etc., to reduce lattice defects and avoid lattice defects. The effect of greater stress

Inactive Publication Date: 2020-04-17
TCL CORPORATION
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing quantum dots, which aims to solve the problem that the core-shell structure quantum dots prepared by using the shell source precursor for continuous injection growth in the prior art have a large lattice stress and many surface lattice defects. , the problem affecting the fluorescence intensity

Method used

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preparation example Construction

[0015] In the description of the present invention, it should be understood that the terms "first" and "second" are only used for description purposes, and cannot be interpreted as indicating or implying relative importance or the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined. The preparation method of quantum dot core-shell structure nanocrystal comprises the following steps:

[0016] S01. provide an initial quantum dot core, mix the initial quantum dot core with an organic amine, and bind the organic amine to the surface of the initial quantum dot core;

[0017] S02. Carry out a shell growth reaction on the surface of the initial quantum dot core to prepare a shell;

[0018] S03. Mix and heat the solution system after the shell growth reaction...

Embodiment 1

[0056] A preparation method of a core-shell structure nanocrystal, comprising the following steps:

[0057] 1. Preparation of cadmium selenide (CdSe) initial quantum dot cores,

[0058] 11) Preparation of cadmium precursor: take 0.25mmol of CdO, 0.5mmol of octadecylphosphonic acid, 3g of trioctylphosphine oxide and add it to a 50ml there-necked flask, heat to 380°C to dissolve and make it clear and transparent solution and maintained at this temperature;

[0059] 12) Preparation of Se precursor: take 0.5 mmol of Se source solution and then stir at room temperature in 1 ml of trioctylphosphine until it is clear for subsequent use;

[0060] 13) Preparation of CdSe initial quantum dots: inject 1 ml of trioctylphosphine solution into step 11), inject the Se precursor in step 12) to react for 30 s when the temperature of the solution returns to 380 °C, and then inject 10 ml of 18C The diluted quench reaction was cooled to room temperature and washed;

[0061] 4) Cleaning and pur...

Embodiment 2

[0072] A preparation method of a core-shell structure nanocrystal, comprising the following steps:

[0073] 1. The preparation of CdS initial quantum dots is as follows:

[0074] 11) Cadmium Oleate {Cd(OA) 2}Preparation of precursors,

[0075] Add 1 mmol of cadmium oxide (CdO), 4 ml of oleic acid (OA), and 10 ml of octadecene (ODE) to the three-necked flask. First vacuumize at room temperature for 30 mins, then heat to 180 °C to exhaust argon for 60 mins, and then maintain 180 °C for 30 mins. , cooled to room temperature for later use;

[0076] 12) Preparation of selenium (Se) precursor,

[0077] Weigh 10 mmol of Se into 10 ml of trioctylphosphine oxide (TOP), heat to 170 °C for 30 min, and then cool down to 140 °C;

[0078] 13) Preparation of sulfur (S-TOP) precursor,

[0079] Weigh 20mmol of S into 10ml of trioctylphosphine oxide (TOP), heat to 170°C for 30min, and then cool down to 140°C;

[0080] 14) Preparation of sulfur (S-ODE) precursor,

[0081] Weigh 5mmol of S...

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Abstract

The invention provides a preparation method of quantum dots. The preparation method comprises the following steps: providing an initial quantum dot core, and mixing the initial quantum dot core and organic amine to combine the organic amine to the surface of the initial quantum dot core; performing a shell layer growth reaction on the surface of the initial quantum dot core to prepare a shell layer; mixing the solution system after the shell growth reaction and an organic carboxylic acid, and heating; or mixing the system after the shell growth reaction and organic phosphine, and heating; or mixing the solution system after the shell growth reaction and a mixed solution of an organic carboxylic acid and organic phosphine, and heating.

Description

technical field [0001] The invention belongs to the technical field of nanocrystalline material preparation, and in particular relates to a preparation method of quantum dots. Background technique [0002] Nanoscience and nanotechnology are an emerging science and technology with potential application value and economic benefits, so they have attracted the attention of scientists around the world. Compared with bulk materials, nanocrystals (NCs) can exhibit electrical, optical, magnetic and electrochemical properties that are not possessed by bulk materials. Semiconductor nanocrystals, also known as quantum dots (QDs), range in size from 1 to 20 nm, and when the particle size changes, the band gap, valence and conduction bands of semiconductor nanocrystals also change (quantum size effect), such as CdSe The absorption and emission of nanocrystals cover almost the entire visible spectral range, thus, semiconductor nanocrystals exhibit the phenomenon of size-dependent photolu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/02C09K11/881C09K11/883
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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