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Method for preparing nano-diamond membrane by using methanol-argon

A technology of nano-diamond and argon, applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science

Inactive Publication Date: 2020-04-14
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to literature research, the method of preparing nano-diamond film using methanol-argon gas mixture as raw material has not been reported yet.

Method used

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  • Method for preparing nano-diamond membrane by using methanol-argon
  • Method for preparing nano-diamond membrane by using methanol-argon
  • Method for preparing nano-diamond membrane by using methanol-argon

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Utilize methanol and argon to prepare the method for nano-diamond film, its concrete steps are as follows:

[0028] (1) Perform surface defect pretreatment on the silicon wafer for 30 minutes, then ultrasonically treat it in acetone, ethanol and distilled water for 15 minutes respectively, and finally dry it in a nitrogen environment;

[0029] (2) Put the silicon substrate into the reaction chamber of the microwave plasma chemical vapor deposition equipment, and increase the pressure of the chamber to 0.1Pa;

[0030] (3) Introduce high-purity hydrogen gas and activate plasma to treat the silicon wafer for 20 minutes to remove surface organic matter and impurities;

[0031] (4) Slowly lower the hydrogen until the flow rate is zero, and at the same time, fill the reaction chamber with the methanol-argon mixed gas formed after the argon flow passes through the methanol solution diffusion source. The total flow rate of argon is 100 sccm, which is used for the methanol gas d...

Embodiment 2

[0035] Utilize methanol and argon to prepare the method for nano-diamond film, its concrete steps are as follows:

[0036] (1) Perform surface defect pretreatment on the silicon wafer for 30 minutes, then ultrasonically treat it in acetone, ethanol and distilled water for 15 minutes respectively, and finally dry it in a nitrogen environment;

[0037] (2) Put the silicon substrate into the reaction chamber of the microwave plasma chemical vapor deposition equipment, and increase the pressure of the chamber to 0.1Pa;

[0038] (3) Introduce high-purity hydrogen gas and activate plasma to treat the silicon wafer for 20 minutes to remove surface organic matter and impurities;

[0039] (4) Slowly lower the hydrogen until the flow rate is zero, and at the same time, fill the reaction chamber with the methanol-argon mixed gas formed after the argon flows through the methanol solution diffusion source. The total flow rate of argon is 300 sccm, which is used for the methanol gas diffusi...

Embodiment 3

[0045] Utilize methanol and argon to prepare the method for nano-diamond film, its concrete steps are as follows:

[0046] (1) Perform surface defect pretreatment on the silicon wafer for 20 minutes, then ultrasonically treat it in acetone, ethanol and distilled water for 10 minutes respectively, and finally dry it in a nitrogen environment;

[0047] (2) Put the silicon substrate into the reaction chamber of the microwave plasma chemical vapor deposition equipment, and increase the pressure of the chamber to 0.1Pa;

[0048] (3) Introduce high-purity hydrogen gas and activate plasma to treat the silicon wafer for 20 minutes to remove surface organic matter and impurities;

[0049] (4) Slowly lower the hydrogen gas until the flow rate is zero, and at the same time, fill the reaction chamber with the methanol-argon mixed gas formed after the argon flow passes through the methanol solution diffusion source. The total flow rate of argon gas is 300 sccm, which is used for the methanol...

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Abstract

The invention discloses a method for preparing a nano-diamond membrane by using methanol-argon. The method comprises the following steps: (1) carrying out surface defect pretreatment on a P-type silicon wafer with a polished single surface, (2) putting the silicon wafer as a substrate into a reaction cavity of microwave plasma chemical vapor deposition equipment, and adjusting the pressure intensity of the cavity, (3) introducing high-purity hydrogen, exciting plasmas to heat the silicon wafer, removing organic matters and impurities on the surface, and then slowly reducing the hydrogen flow until the hydrogen flow is closed, (4) enabling the argon flow to pass through a methanol solution diffusion source to form methanol-argon mixed gas, and enabling the methanol-argon mixed gas to enterthe reaction cavity, and (5) adjusting reaction process parameters to form plasma, and beginning to deposit a nano-diamond membrane on the silicon wafer. The nanoscale diamond membrane is prepared byadopting a microwave plasma chemical vapor deposition method, the use of flammable and combustible gas is completely avoided, the nanoscale diamond membrane is successfully prepared under the condition of no direct participation of hydrogen, the preparation cost of the nanoscale diamond membrane is reduced, and the experimental safety in the preparation process is greatly ensured.

Description

technical field [0001] The invention relates to a method for preparing a nano-diamond film by utilizing methanol and argon, and belongs to the technical field of nano-scale diamond film preparation. Background technique [0002] Carbon atoms in diamond use sp 3 The hybridization method forms an alternately connected regular tetrahedral space structure, which is recognized as the hardest material in nature. Nano-diamond film is a two-dimensional material formed by the epitaxial growth of nano-scale diamond particles. Its physical and chemical properties are stable, and it has excellent thermal conductivity and infrared transmittance. It is almost the only one used in extreme environments. Candidate materials have broad application prospects in high-tech fields such as aerospace and integrated circuits. [0003] Chemical vapor deposition (CVD) is currently the main method for preparing diamond films. According to the difference of gas excitation source, it can be divided int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/511C23C16/02C23C16/52B82Y30/00B82Y40/00
CPCC23C16/274C23C16/511C23C16/0245C23C16/52B82Y30/00B82Y40/00
Inventor 杨黎杜倩郭胜惠冯曙光刘秉国
Owner KUNMING UNIV OF SCI & TECH
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