A vanadium dioxide intelligent thermal control device with imitation beetle multi-level structure and its preparation method
A kind of vanadium dioxide intelligent and long-term beetle technology, which is applied to the living condition control device of space navigation vehicle, ion implantation plating, coating and other directions, can solve the problems of high solar absorption ratio and small change in emissivity.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0027] Specific implementation mode one: combine figure 1 Describe this embodiment in detail. In this embodiment, a vanadium dioxide intelligent thermal control device with a multi-level structure imitating a beetle consists of a semiconductor base layer, an infrared highly reflective metal layer, and a HfO2 layer from bottom to top. 2 Dielectric layer, VO 2 layer and protective layer composition;
[0028] The HfO 2 The dielectric layer consists of multiple HfO 2 Composed of micro-nano structural units, and HfO 2 The shape of the micro-nano structural unit is a cube with a square base, and multiple HfO 2 The micro-nano structural units are uniformly arranged on the upper surface of the infrared highly reflective metal layer; the HfO 2 The bottom square of the micro-nano structural unit has a side length of 1 μm to 10 μm and a height of 400nm to 2000nm; adjacent HfO 2 The distance between micro-nano structural units is 0.5 μm to 5 μm;
[0029] The VO 2 layer consists of...
specific Embodiment approach 2
[0033] Embodiment 2: This embodiment is different from Embodiment 1 in that: the semiconductor base layer is quartz, glass or silicon; the infrared highly reflective metal layer is Ag, Ni, Mg, Zn or Al; The above protective layer is Al 2 o 3 , SiO 2 、TiO 2 or ZrO 2 . Others are the same as in the first embodiment.
specific Embodiment approach 3
[0034] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that: the thickness of the infrared highly reflective metal layer is 50nm-250nm; the HfO 2 The thickness of the dielectric layer is 400nm-2000nm; the VO 2 The thickness of the layer is 50nm-500nm; the thickness of the protective layer is 50nm-100nm. Others are the same as those in the first or second embodiment.
PUM
Property | Measurement | Unit |
---|---|---|
length | aaaaa | aaaaa |
height | aaaaa | aaaaa |
diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com