Vanadium dioxide intelligent thermal control device with longhorn beetle-imitating multistage structure and preparation method thereof
A technology of vanadium dioxide intelligence and longhorn, which is applied in the control of the living conditions of aerospace vehicles, ion implantation plating, coating, etc., can solve the problems of small emissivity change and high solar absorption ratio
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specific Embodiment approach 1
[0027] Specific implementation mode one: combine figure 1 Describe this embodiment in detail. In this embodiment, a vanadium dioxide intelligent thermal control device with a multi-level structure imitating a beetle is sequentially composed of a semiconductor base layer, an infrared highly reflective metal layer, HfO 2 Dielectric layer, VO 2 layer and protective layer composition;
[0028] The HfO 2 The dielectric layer consists of multiple HfO 2 Composed of micro-nano structural units, and HfO 2 The shape of the micro-nano structural unit is a cube with a square base, and multiple HfO 2 The micro-nano structural units are uniformly arranged on the upper surface of the infrared highly reflective metal layer; the HfO 2 The bottom square of the micro-nano structural unit has a side length of 1 μm to 10 μm and a height of 400nm to 2000nm; adjacent HfO 2 The distance between micro-nano structural units is 0.5 μm to 5 μm;
[0029] The VO 2 layer consists of multiple W-doped...
specific Embodiment approach 2
[0033] Embodiment 2: This embodiment is different from Embodiment 1 in that: the semiconductor base layer is quartz, glass or silicon; the infrared highly reflective metal layer is Ag, Ni, Mg, Zn or Al; The above protective layer is Al 2 o 3 , SiO 2 、TiO 2 or ZrO 2 . Others are the same as in the first embodiment.
specific Embodiment approach 3
[0034] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that: the thickness of the infrared highly reflective metal layer is 50nm-250nm; the HfO 2 The thickness of the dielectric layer is 400nm-2000nm; the VO 2 The thickness of the layer is 50nm-500nm; the thickness of the protective layer is 50nm-100nm. Others are the same as those in the first or second embodiment.
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