Au-Au dimer array structure as well as preparation method and application thereof
An array structure and dimer technology, which is applied in measuring devices, instruments, and material analysis through optical means, can solve the problems of poor repeatability of test results, complicated methods, and difficulty in controlling repeatability, and achieve Raman signal Stable, simple process, enhanced effect of plasmon resonance
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Embodiment 1
[0058] This example discloses an embodiment of the construction of the first gold particles, which is specifically described as follows:
[0059] Cut out two silicon wafers with a thickness of 0.2mm and a size of 2cm×2cm, marked as No. 1 and No. 2 silicon wafers. Put the two silicon wafers into deionized water, anhydrous ethanol, acetone, and 1.84g / ml concentration in turn. Sulfuric acid, 1.1g / m hydrogen peroxide water, deionized water were ultrasonically cleaned, ultrasonic frequency was 20KHz, ultrasonic power was 500W, each liquid was ultrasonically cleaned for 20min, and then placed in an oven for drying at 100°C until the water on the silicon wafer was completely After evaporation, the silicon wafer was placed in an ultraviolet-ozone cleaning machine for irradiation for 30 minutes to obtain a silicon wafer with a hydrophilic surface;
[0060] Take 10 μL of the suspension of polystyrene microspheres with a content of 2.5 wt% and diameters of 300 nm and 500 nm respectively,...
Embodiment 2
[0066] This embodiment discloses an implementation of the Au-Au dimer array structure, which is specifically described as follows:
[0067] Cut out 3 silicon wafers with a thickness of 0.2mm and a size of 2cm×2cm, marked as silicon wafers No. 1, 2 and 3, and then put these silicon wafers into deionized water, absolute ethanol, acetone, 1.84g / ml concentrated sulfuric acid, 1.1g / ml hydrogen peroxide, deionized water, ultrasonic cleaning, ultrasonic frequency 20KHz, ultrasonic power 1000W, ultrasonic cleaning for each liquid for 40min, and then put it in an oven to dry at 90 ℃, until the water on the silicon wafer is completely evaporated After that, the silicon wafer was placed in an ultraviolet-ozone cleaning machine for irradiation for 30 minutes to obtain a silicon wafer with a hydrophilic surface;
[0068] Take 20 μL of the polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 300nm, mix it with an equal volume of absolute ethanol, and then perform u...
Embodiment 3
[0080] This embodiment discloses an implementation of the Au-Au dimer array structure, which is specifically described as follows:
[0081]Cut out 3 silicon wafers with a thickness of 0.2mm and a size of 2cm×2cm. Put the wafers into deionized water, anhydrous ethanol, acetone, 1.84g / ml concentrated sulfuric acid, 1.1g / ml hydrogen peroxide, Ultrasonic cleaning was carried out in ionized water, ultrasonic frequency 20KHz, ultrasonic power 500W, each liquid was ultrasonically cleaned for 40min, and then placed in an oven to dry at 110°C. After the water on the silicon wafer was completely evaporated, the silicon wafer was placed in an ultraviolet ozone cleaning machine. Irradiate for 30min to obtain a silicon wafer with hydrophilic surface;
[0082] Take 10 μL of the polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 500nm, mix it with an equal volume of absolute ethanol, and then perform ultrasonic vibration for 15min to obtain a uniformly dispersed po...
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