Preparation method of Topcon structure solar cell

Abstract

The invention provides a preparation method of a Topcon structure solar cell. The preparation method comprises the following steps: S1, providing a prefabricated silicon wafer; S2, sequentially manufacturing tunneling silicon oxide, amorphous silicon and silicon oxide on the back surface of the silicon wafer; S3, cleaning the wound amorphous silicon, and then cleaning the front BSG and the back silicon oxide; S4, performing phosphorus diffusion on the amorphous silicon to form an n + layer; S5, cleaning phosphorosilicate glass on the back surface; S6, preparing passivation layers on the frontsurface and the back surface respectively; and S7, manufacturing an electrode.

Description

technical field [0001] The invention relates to the technical field of photovoltaic power generation, in particular to a preparation method of a topcon structure solar cell. Background technique [0002] In conventional passivated emitter back contact (PERC) solar cells, the atomic layer deposition (ALD) method is used to form a full-cover aluminum oxide (Al 2 o 3 ) passivation layer, but due to the Al 2 o 3 Due to the dielectric properties of the passivation layer, it is necessary to remove part of the passivation layer by laser grooving in the subsequent process to form a back surface structure of the partly metallized part of the passivation layer. [0003] In order to further reduce the rear recombination rate, realize the overall passivation of the rear, and eliminate the film opening process on the rear, the passivation contact technology has become a research hotspot in the industry. TOPCon (Tunnel Oxide Passivated Contact) technology is to prepare an ultra-thin t...

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Problems solved by technology

[0004] However, there are many problems in the production process of the existing Topcon structure battery, for example: the back tunneling layer and the amorphous silicon production will have serious wrapping plating, and the cleaning is not clean, resulting in low battery efficiency and yield; cleaning the front wrapping amorphous silicon During the silicon process, it is inevitable to damage the front P+ layer, etc.