Pressure sensitive element resistant to high temperature particle erosion and its preparation method and sputtered thin film pressure sensor

Abstract

The invention discloses a pressure sensitive element resistant to high temperature particle erosion, a preparation method thereof and a thin film sputtering pressure sensor. The pressure sensitive element includes an elastic base material and is in a flared convex elastic body structure, including a pressurized chamber, a body and An installation part; a transition layer, an insulation layer, a resistive film layer, a passivation layer and a metal layer are sequentially arranged on the installation part. The preparation method comprises sequentially preparing a transition layer, an insulating layer, a resistive film layer, a passivation layer and a metal layer on the elastic base material. The pressure sensitive element of the present invention has the advantages of good high temperature resistance, strong erosion / impact resistance, long service life, wide application range, good reliability, high strain sensitivity, etc., and its preparation method has the advantages of simple preparation process, convenient operation, low production cost, Short production cycle and other advantages, the pressure sensitive element can be widely used in the preparation of sputtering thin film pressure sensors, has high use value and good application prospects.

Description

technical field [0001] The invention belongs to the technical field of pressure sensor preparation, and relates to a pressure sensitive element resistant to high temperature particle erosion, a preparation method thereof, and a sputtering film pressure sensor. Background technique [0002] Sputtered thin film pressure sensor technology is generally limited to use at ordinary temperatures. Different designs meet different application occasions. In some occasions, high-temperature gas is required for pressure measurement, and these high-temperature gases often contain solid particles, which can scour and impact sensitive components at a very fast speed. Ordinary pressure sensors are difficult to resist the erosion and impact under such high temperature conditions. For example, the silicon piezoresistive pressure sensor with an isolation diaphragm, the diaphragm is only 0.03mm, and it is easy to deform or break down under the erosion of high temperature particles. The thick fi...

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Problems solved by technology

Ordinary pressure sensors are difficult to resist the erosion and impact under such high temperature conditions. For example, the silicon piezoresistive pressure sensor with an isolation diaphragm, the diaphragm is only 0.03mm, and it is easy to deform or break down under the erosion of high temperature particles. The thick film ceramic pressure sensor cannot High temperature resistance; the maximum temperature of the sapphire pressure sensor is 250°C, which cannot meet the high temperature measurement of gas

Obviously, the existing common pressure sensors still have the following problems: (1) cannot be applied to the measurement of high-temperature gas and high-temperature melt; (2) do not have the ability to resist the erosion and impact of solid particles

In addition, the following problems still exist in the pressure sensitive element of the existing sputtered film pressure sensor: SiO 2 As an insulating layer, since SiO 2 The coefficient of thermal expansion is 0.5×10 -6 / K, which has a large difference in thermal expansion coefficient from that of the metal substrate. As a result, the operating temperature range is narrow, and the film on the metal substrate will burst at high temperature, losing the pressure measurement function, that is, the pressure sensitive element fails

The high-temperature alloy is used as the elastic diaphragm in the pressure sensitive element of the existing sputtered thin-film high-temperature pressure sensor. Although this design solves the problem of high-temperature resistance measurement, there is still a problem of thermal expansion coefficient mismatch between the high-temperature alloy and the insulating layer material. As a result, the sputtered film high-temperature pressure sensor still has deficiencies in temperature shock resistance and life; at the same time, the pressure sensitive element in the sputtered film high-temperature pressure sensor is located in the pressurized channel, and the pressure sensitive element is located in the pressurized channel because the pressurized channel is deep. A concave surface with a vertical dead angle is formed between it and the pressurized channel. When the burning solid particles hit the concave surface, it is easy to cause solid particles to accumulate, thereby blocking the pressurized channel. Long-term use will reduce the detection accuracy of the sensor

The existence of the above problems greatly limits the wide application of sputtered thin film pressure sensors

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