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Planar memristor and preparation method thereof

A memristor, planar technology, applied in the field of microelectronics, can solve the problems of poor consistency, high power consumption, complex operation, etc., and achieve the effects of reducing randomness, fast ion conduction characteristics, and easy ion transmission

Active Publication Date: 2020-03-24
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to solve the technical problems of poor consistency, complex operation and high power consumption of existing memristor devices

Method used

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  • Planar memristor and preparation method thereof
  • Planar memristor and preparation method thereof
  • Planar memristor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0054] 1) Preparation and transfer of germanium selenide: the germanium selenide film is peeled off to SiO by mechanical stripping 2 / Si substrate surface, the thickness of the film is about 20nm, and then in Ar / H 2 (Flow rate 100 / 5sccm), annealing at 300°C for one hour;

[0055] 2) Preparation of inert electrode: Design an inert electrode pattern on one end of the two-dimensional atomic crystal by ultraviolet lithography or electron beam lithography, then use electron beam evaporation to evaporate a 50nm thick gold electrode, and finally peel off to obtain an inert gold electrode;

[0056] 3) Preparation of active electrode: use ultraviolet lithography or electron beam lithography to design an active electrode pattern at the other end of the two-dimensional atomic crystal at a distance of 300 nm from the inert electrode, then use electron beam evaporation to evaporate a 50 nm thick silver electrode, and finally peel it off to obtain active silver electrode.

Embodiment 2

[0058] 1) Preparation and transfer of germanium sulfide: peel off the germanium sulfide film to SiO by mechanical stripping 2 / Si substrate surface, the thickness of the film is about 20nm, and then in Ar / H 2 (Flow rate 100 / 5sccm), annealing at 300°C for one hour;

[0059] 2) Preparation of inert electrode: Design an inert electrode pattern on one end of the two-dimensional atomic crystal by ultraviolet lithography or electron beam lithography, then use electron beam evaporation to evaporate a 50nm thick gold electrode, and finally peel off to obtain an inert gold electrode;

[0060] 3) Preparation of active electrode: use ultraviolet lithography or electron beam lithography to design an active electrode pattern at the other end of the two-dimensional atomic crystal at a distance of 300 nm from the inert electrode, then use electron beam evaporation to evaporate a 50 nm thick silver electrode, and finally peel it off to obtain active silver electrode.

Embodiment 3

[0062] 1) Preparation and transfer of tin sulfide: peel off the tin sulfide film to SiO by mechanical stripping 2 / Si substrate surface, the thickness of the film is about 20nm, and then in Ar / H 2 (Flow rate 100 / 5sccm), annealing at 300°C for one hour;

[0063] 2) Preparation of inert electrode: Design an inert electrode pattern on one end of the two-dimensional atomic crystal by ultraviolet lithography or electron beam lithography, then use electron beam evaporation to evaporate a 50nm thick gold electrode, and finally peel off to obtain an inert gold electrode;

[0064] 3) Preparation of active electrode: use ultraviolet lithography or electron beam lithography to design an active electrode pattern at the other end of the two-dimensional atomic crystal at a distance of 300 nm from the inert electrode, then use electron beam evaporation to evaporate a 50 nm thick silver electrode, and finally peel it off to obtain active silver electrode.

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Abstract

The invention discloses a planar memristor and a preparation method thereof, the structure of the memristor is the last planar structure of a substrate, the memristor comprises an active electrode atone end, an inert electrode at the other end and a two-dimensional atomic crystal in the middle of the electrode, and the two-dimensional atomic crystal is a single crystal IV-VI group semiconductor and is in the shape of MX (M: Ge, Sn, Pb; x: S, Se), which are fast ion conductors and have unique folded layered structures, so that when the memristor is subjected to the action of an electric field,oxidized metal cations from an active electrode can be quickly migrated among layers, vacancies or special channels of an interface of a two-dimensional atomic material, thereby realizing the memristor with excellent performances such as low power consumption, good cycle consistency, large switching ratio and the like. In addition, the preparation method provided by the invention is simple and easy to implement, has a wide application prospect in resistive random access memories and artificial synaptic devices needing low power consumption, and also provides a new thought for memristor preparation.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more specifically, to a planar memristor and a preparation method thereof. Background technique [0002] Memristor, the full name of memory resistor (Memristor), is the fourth basic circuit element besides resistance, capacitance, and inductance. As early as 1971, Professor Cai Shaotang deduced the existence of this element from the perspective of logic and axiom. And point out that it is a passive circuit element related to magnetic flux and electric charge. Memristors have the characteristics of simple structure, easy integration, fast speed, small size, and compatibility with CMOS. In addition, the multi-value, low power consumption and nonlinearity of memristors are well in line with the requirements of artificial synapses and artificial neurons. Therefore, it has great application prospects in the direction of next-generation memory and neural networks. [0003] The metal cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/245H10N70/8822H10N70/8825H10N70/011
Inventor 徐明刘龙杨哲缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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