Silicon carbide epitaxial gallium oxide film method and silicon carbide epitaxial gallium oxide film structure

Abstract

The invention discloses a method for epitaxially growing a gallium oxide film from silicon carbide. The method comprises the following steps: selecting a silicon carbide substrate layer; preparing a (AlxGa1-x) 2O3 buffer layer on the surface of the silicon carbide substrate layer; and preparing a Ga2O3 film layer on the surface of the (Al < x > Ga < 1-x >) < 2 > O < 3 > buffer layer. The preparation method of the silicon carbide epitaxial gallium oxide film provided by the invention comprises the following steps: firstly, forming a (AlxGa1-x) 2O3 buffer layer on the surface of a silicon carbide substrate layer; according to the method, the (AlxGa1-x) 2O3 buffer layer is formed on the surface of the silicon carbide substrate layer, so that the dislocation defect caused by lattice mismatch is reduced, then the Ga2O3 film layer is formed on the surface of the (AlxGa1-x) 2O3 buffer layer, the crystallinity of the subsequently grown Ga2O3 film layer is improved, and finally, the structure of the high-crystallinity Ga2O3 film material is prepared on the silicon carbide substrate layer.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a silicon carbide epitaxial gallium oxide thin film method and a silicon carbide epitaxial gallium oxide thin film structure. Background technique [0002] In recent years, as a third-generation semiconductor, Ga 2 o 3 Because of its large bandgap width, high breakdown electric field strength, and small on-resistance, the material has attracted widespread attention, and it is the best material choice for developing power devices. At present, Ga can be prepared by high temperature and other methods 2 o 3 single crystal substrate, and Ga can be homoepitaxy on it with excellent optical properties and electrical properties 2 o 3 Thin films, which can be used as high-performance power electronic devices, ultraviolet photodetectors and ultraviolet sensors, have broad application prospects. However, due to their low thermal conductivity, the application of powe...

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Problems solved by technology

At present, Ga can be prepared by high temperature and other methods 2 o 3 single crystal substrate, and Ga can be homoepitaxy on it with excellent optical properties and electrical properties 2 o 3 Thin films can be used as high-performance power electronic devices, ultraviolet photodetectors and ultraviolet sensors, and have a wide range of application prospects. However, due to their low thermal conductivity, the application of power electronic devices at high temperatures is limited.

[0003] As a third-generation semiconductor material, SiC also has excellent performance and high thermal conductivity. SiC and Ga 2 o 3 The combination of them can not only exert their respective advantages, but also solve the problem of low thermal conductivity of gallium oxide. However, SiC and Ga 2 o 3 Due to the existence of many defects due to the large lattice mismatch, its wide application is limited

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