Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor performance of fin diodes, achieve the effects of improving electrical performance, weakening parasitic capacitance, and improving uniformity

Active Publication Date: 2020-03-10
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the performance of fin diodes formed by prior art is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.

[0034] Now in combination with the semiconductor devices of the prior art, the reasons for the poor performance of the semiconductor devices formed by the prior art are analyzed:

[0035] figure 1 It is a schematic diagram of the structure of a semiconductor device:

[0036] Please refer to figure 1 , the semiconductor device includes: a substrate 100, the substrate 100 has a first well region 110, the first well region 110 is doped with first dopant ions, and the substrate 100 has fins 120 and an isolation structure 130, the isolation structure 130 covers the sidewall of the fin 120, and the top surface of the isolation structure 130 is lower than the top surface of the fin 120; the fin 120 has a plurality of dummy gates arranged at intervals structure 140, the dummy gate structure 140 covers part of the top and sidewalls of the fin portion 120; the fin portion 120...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor device and a forming method thereof. The method comprises the steps of providing a substrate, wherein the substrate is internally provided with a first well region, the first well region is doped with first ions, the first well region is provided with a first fin portion, the substrate is provided with an isolation structure, the isolation structure covers part of the side wall of the first fin portion, and the top surface of the isolation structure is lower than the top surface of the first fin portion; forming a plurality of discrete first pseudo gatestructures across the first fin portion, wherein the first pseudo gate structures are located on part of the top surface and part of the side wall surface of the first fin portion, and each first pseudo gate structure includes a first pseudo gate layer; forming a first epitaxial layer in the first fin portion between the adjacent first pseudo gate structures; removing the first pseudo gate layers,and forming first pseudo gate openings in the dielectric layer; and forming an insulating layer in each first pseudo gate opening, wherein the surface of the insulating layer is flush with the surface of the dielectric layer. The semiconductor device formed according to the method is good in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Semiconductor diodes, also known as crystal diodes, or diodes for short, are electronic devices commonly used in the semiconductor field. There is a PN junction inside the diode, and this electronic device has unidirectional conductivity according to the direction of the applied voltage. The PN junction in a diode is a p-n junction interface formed by a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface to form a self-built electric field. When the applied voltage is equal to zero, the diffusion current caused by the carrier concentration difference on both sides of the p-n junction is equal to the drift current caused by the self-built electric field, and it is in a state of electrical balance. In almost all electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/8249H01L27/07H01L29/78
CPCH01L21/8249H01L27/0722H01L29/785H01L2029/7858
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com