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Preparation method for polycrystalline silicon function layer

A polysilicon layer and functional layer technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of a large number of charges, the device is prone to leakage, and the thickness uniformity is not easy to control, etc., to improve high-frequency performance. , the effect of reducing the number of internal charges, excellent deposition uniformity

Inactive Publication Date: 2020-03-10
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0006] Second, the amount of charge inside the polysilicon functional layer is relatively large, which makes the devices using it prone to leakage
[0007] Third, the growth rate of the polysilicon layer is fast, and the thickness uniformity is not easy to control when growing a thin polysilicon layer

Method used

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  • Preparation method for polycrystalline silicon function layer
  • Preparation method for polycrystalline silicon function layer
  • Preparation method for polycrystalline silicon function layer

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preparation example Construction

[0033] Please also refer to figure 1 and figure 2 , the preparation method of polysilicon functional layer provided by the invention, it comprises:

[0034] S1, forming an isolation layer on the substrate;

[0035] S2, forming a polycrystalline seed layer on the isolation layer;

[0036] S3, forming a polysilicon layer on the polycrystalline seed layer.

[0037] The substrate is a silicon substrate. Optionally, the isolation layer is a silicon dioxide layer.

[0038] With the help of the isolation layer, the interface state of the polysilicon layer can be guaranteed, and the formation of a low-resistance layer can be avoided, thereby improving the high-frequency performance of the material.

[0039] With the help of the polycrystalline seed layer, due to its highly controllable deposition parameters and excellent deposition uniformity, it can reduce the number of charges inside the polycrystalline silicon functional layer and improve the controllability of the thickness ...

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Abstract

The invention provides a preparation method for a polycrystalline silicon function layer. The preparation method comprises the following steps of: forming an isolation layer on a substrate, forming apolycrystalline seed crystal layer on the isolation layer, and forming a polycrystalline silicon layer on the polycrystalline seed crystal layer. According to the preparation method for the polycrystalline silicon function layer provided by the invention, the formation of a low-resistance region can be avoided, the quantity of charges inside the polycrystalline silicon function layer is reduced, and the controllability of the thickness uniformity of the polycrystalline silicon function layer is improved.

Description

technical field [0001] The invention relates to the field of polysilicon functional layer manufacturing, in particular to a method for preparing a polysilicon functional layer. Background technique [0002] The polysilicon functional layer can be applied to gates of metal oxide semiconductor field effect transistors, polysilicon isolation layers, and polysilicon sacrificial layers in the MEMS field, etc. [0003] For single-sided polysilicon functional layers, SiCl is generally used 4 、SiH 4 、SiF 4 etc. as raw materials, prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition). In this way, the reaction temperature (generally not higher than 450°C) is lower, and the growth rate is faster, and by controlling the content of doping elements in the reaction process, a polysilicon functional layer with required resistivity can be obtained. figure 1 It is a structural diagram of an existing polysilicon functional layer. Such as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02164H01L21/0245H01L21/02532H01L21/0262H01L21/02694
Inventor 孙伟周志文
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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