Manufacturing process of low electromagnetic interference power device terminal structure

Abstract

The invention provides a manufacturing process of a low electromagnetic interference power device terminal structure. The terminal structure manufactured by the process comprises a metallized drain electrode, a first conductive type semiconductor substrate and a first conductive type semiconductor epitaxial layer, a second conductive type semiconductor main junction, a second conductive type semiconductor equipotential ring, a first conductive type cut-off ring, a second conductive type semiconductor field limiting ring, a first dielectric layer, a second dielectric layer, a third dielectric layer, a conductive field plate, a resistor and a metallized source electrode which are stacked from bottom to top. In the invention, an HK dielectric layer can be introduced between the field limitingring and the field plate. An MIS capacitor structure is formed by the semiconductor field limiting ring, the HK dielectric layer and the field plate and is connected in series with an adjacent polycrystalline silicon resistor so that an RC absorption network is formed between high potentials of the source electrode and the drain electrode, dv / dt and di / dt generated by a power device in a fast switch can be effectively inhibited, and an EMI noise is relieved.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a manufacturing process of a power device terminal structure. Background technique [0002] Usually, the typical application environment of power devices is switching power supply. In order to meet the miniaturization requirements of switching power supply, its switching frequency and power density are constantly increasing. Modularization and functional integration can improve the power density of electronic components, but it will also produce more and more The increasingly complex internal electromagnetic environment. When the power device is in the fast switching state, its voltage and current change sharply in a short time, resulting in high dv / dt and di / dt, which become a strong source of electromagnetic interference. [0003] In terms of electromagnetic interference (EMI) suppression technology, one is to reduce high-frequency and high-amplitude electromagnetic ...

AI Technical Summary

Problems solved by technology

[0003] In terms of electromagnetic interference (EMI) suppression technology, one is to reduce high-frequency and high-amplitude electromagnetic interference from the perspective of circuit conduction. For example, through the design of EMI filters, common-mode interference and differential-mode interference can be effectively suppressed, but only Limited to filtering out high-frequency clutter in a certain frequency band

The second is to improve the parasitic capacitance from the aspect of device design, but it is easy to increase the switching loss of the device or increase the process steps of the device

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