Circuit and method for detecting characteristics of transistor in pixel region of LTPSAMOLED display substrate

Abstract

The invention relates to a circuit and a method for detecting the characteristics of a transistor in a pixel region of an LTPSAMOLED display substrate. The circuit includes a drive transistor DTFT, astorage capacitor Cst, an initialization module, a write-in module and a light-emitting control module, and is characterized by further comprising a detection transistor and a plurality of detection ends, wherein the plurality of detection ends comprise a first detection end which is connected with a first electrode of the detection transistor, a second electrode of the detection transistor is connected with the grid electrode of the drive transistor DTFT, and the grid electrode of the detection transistor is connected with a reset signal line. The circuit is convenient to manufacture and hasthe higher sample preparation success rate, and meanwhile, the structural design only needs to directly overlap a probe on the metal detection end. The added detection transistor can add an initialization path for the storage capacitor Cst, so that the reset effect is optimized, and the flicker, residual images and the like can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a circuit and a method for detecting characteristics of a transistor in a pixel region of an LTPSAMOLED display substrate. Background technique [0002] The array substrate driving part of LTPS AMOLED is composed of multiple thin film transistors (TFTs). The performance of these TFTs will directly affect the display effect. Therefore, the performance test of TFTs is very important in the display panel industry. Conventional TFT characteristic evaluation mainly includes: TFT transfer characteristic curve and output characteristic curve, and TFT characteristic parameters (such as threshold voltage, mobility, off-state leakage current, etc.). [0003] At present, in the existing technology, TFT characteristics are mainly evaluated by designing TEG test keys in the non-display area. Due to doping in LTPS technology, ELA (Excimer Laser Annel, excimer laser annealing) and other proces...

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Problems solved by technology

[0004]But for the first method, the success rate is extremely low due to the difficulty in controlling the corrosion accuracy of the composite film layer and the mechanical grinding accuracy to the micron level

When FIB is lapped, due to the difficulty of confirming the effect of platinum plating or lapping, the test results fluctuate greatly and the accuracy is not enough

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