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Reduced graphene oxide-based temperature sensor, preparation method thereof and application

A temperature sensor, graphene technology, applied in the sensor field, can solve the problem of less temperature sensors, achieve the effects of ultra-fast temperature detection, improve temperature sensitivity, and high thermal conductivity

Inactive Publication Date: 2020-02-21
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, there are very few temperature sensors that can achieve fast response and high sensitivity

Method used

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  • Reduced graphene oxide-based temperature sensor, preparation method thereof and application
  • Reduced graphene oxide-based temperature sensor, preparation method thereof and application
  • Reduced graphene oxide-based temperature sensor, preparation method thereof and application

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preparation example Construction

[0037] The embodiment of the present invention also provides a method for preparing a temperature sensor based on reduced graphene oxide, comprising:

[0038] provide the substrate;

[0039] disposing an insulating material layer on the surface of the substrate;

[0040] modifying a silane coupling agent on the surface of the insulating material layer;

[0041] making the graphene oxide film covalently bonded to the surface of the insulating material layer by reacting with the silane coupling agent;

[0042] Arranging two or more electrodes spaced apart from each other on the surface of the graphene oxide film; and

[0043] Annealing the graphene oxide film in an air atmosphere to obtain a reduced graphene oxide film with an electrical conductivity of 5-15 S / cm.

[0044] In some embodiments, the temperature of the annealing treatment is 170-180° C., and the time is 3-4 minutes.

[0045] For example, in some more specific embodiments, by controlling the annealing condition ...

Embodiment 1

[0066] A temperature sensor based on reduced graphene oxide provided in this embodiment includes a substrate, a silicon dioxide layer and a reduced graphene oxide film that are sequentially arranged on the surface of the substrate, and the reduced graphene oxide film and the two The silicon oxide layer is covalently bonded by a silane coupling agent, and a plurality of electrodes are arranged on the reduced graphene oxide film, and the plurality of electrodes are spaced apart from each other.

[0067] The structure of the temperature sensor of this embodiment can refer to figure 1 Shown, its a kind of preparation process comprises:

[0068] (1) First use the solution of perhydropolysilazane (PHPS) in toluene, and use the solution of perhydropolysilazane (PHPS) in toluene on the purchased 500 μm thick polyimide (PI) film substrate 1 solution, and a silicon dioxide film was prepared as a flat layer 2 by a spin coating method. Wherein, the rotating speed is 2000rad / min, and the...

Embodiment 2

[0078] The preparation process of the temperature sensor of this embodiment includes the following steps:

[0079] (1) First use a solution of perhydropolysilazane (PHPS) in toluene, and use perhydropolysilazane (PHPS) in toluene on the purchased 500 μm thick polydimethylsiloxane (PDMS) film substrate solution in , a silicon dioxide film was prepared as a flat layer by spin coating. Wherein, the rotating speed is 2000rad / min, and the thickness of the obtained silicon dioxide is below 100nm. The thin film with a flat layer was annealed on a hot stage at 300° C. for 1 hour, and then treated with oxygen plasma at a power of 100 W for 3 minutes.

[0080] (2) Deposit 3-aminopropyltriethoxysilane (APTES) 3 on the silicon dioxide planar layer by vapor deposition method at 40° C., and then put the substrate into ethanol for 10 minutes of ultrasonication.

[0081] (3) After drying, immerse it in a graphene oxide aqueous solution (0.2 mg / mL) for 60 minutes, and then ultrasonicate the ...

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Abstract

The invention discloses a reduced graphene oxide-based temperature sensor. The reduced graphene oxide-based temperature sensor comprises a flat insulating material layer and a reduced graphene oxide film covering the insulating material layer; the reduced graphene oxide film and the insulating material layer are covalently bonded; two or more electrodes are arranged on the reduced graphene oxide film at intervals; and the conductivity of the reduced graphene oxide film is 5-15 s / cm. The invention also discloses a preparation method of the reduced graphene oxide-based temperature sensor. Compared with the prior art, the reduced graphene oxide-based temperature sensor has the advantages of ultra-fast and high-sensitivity temperature detection, high temperature resolution, wide detectable temperature range and insensitivity to external pressure, and adaptivity to complex application environments.

Description

technical field [0001] The invention relates to a temperature sensor based on reduced graphene oxide and its preparation method and application, belonging to the technical field of sensors. Background technique [0002] A temperature sensor is a device that converts a temperature signal into an electrical signal. It is widely used in industrial practices, such as robotics, production automation, aerospace, health monitoring, etc. It, together with communication technology and computer technology, constitutes the three pillars of the information industry. With the development of science and technology and the needs of human life, temperature sensors have gradually moved towards miniaturization, integration and intelligence. The small temperature sensor has strong environmental adaptability, can resist many adverse environmental factors, and has strong biocompatibility, so it can be applied in the field of medicine and biology. In the process of integrated development of mic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/00
CPCG01K7/003
Inventor 李立强黄忆男王曙光王中武
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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