Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phase-changing material-based adjustable slow light device and fabrication method and application thereof

A phase-change material and device technology, applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problems of limited device modulation band, no modulation space, single modulation method, etc., and achieve wide operating frequency range, various phase change conditions, Effects over a wide frequency range

Active Publication Date: 2020-02-07
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the existing slow light devices are mostly limited to passive devices that cannot be modulated, that is, once the device is fabricated, its performance is fixed and there is no modulation space, which brings huge restrictions to the practical application of slow light
In a small number of partially tunable slow-light devices, restricted by factors such as material selection and device preparation methods, the modulation band of the device is limited and the modulation method is single, which is not conducive to the integration and application of slow-light devices.
The above problems severely limit the further promotion of slow light devices, so new methods are needed to obtain wide-spectrum range, multi-method tunable slow light devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase-changing material-based adjustable slow light device and fabrication method and application thereof
  • Phase-changing material-based adjustable slow light device and fabrication method and application thereof
  • Phase-changing material-based adjustable slow light device and fabrication method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] This embodiment is used to illustrate the preparation method of the adjustable slow light device of the present invention.

[0076] figure 1 The process flow chart of the adjustable slow light device prepared in Example 1 of the present invention is shown.

[0077] Step S1. Spin-coating photoresist 1 on a clean light-transmitting dielectric substrate, and obtain a periodic strip structure through exposure and other means; the dielectric substrate is a low-loss dielectric that can transmit light in the required response band, including quartz , Silicon wafer, sapphire substrate, etc.

[0078] Step S2. The periodic strip structure described in step S1 is etched into grooves; the depth of the grooves is consistent with the thickness of subsequent film deposition. The appropriate etching method is selected according to the material of the dielectric substrate. The method can be either dry etching technique or physical chemical etching.

[0079] Step S3. Depositing the phase chang...

Embodiment 2-3

[0097] This embodiment is used to illustrate the preparation method of the adjustable slow light device of the present invention.

[0098] Using the same method as in Example 1, the only difference is that the raw materials are replaced, and the tunable slow light device can also be obtained. The materials and properties are shown in the following table.

[0099] Table 1 Preparation and properties of different tunable slow light devices

[0100]

[0101] The deposition conditions of silicon oxide and aluminum oxide for the dielectric protective layer in the above embodiments are as follows:

[0102] Among them, the deposition of silicon oxide requires a plasma enhanced chemical vapor deposition system (System100 PECVD, Oxford Instruments, UK), the deposition of silicon oxide uses a reactive gas and the ratio is SiH4:N2O:N2=10sccm:327sccm:1000sccm, the deposition temperature is 110℃, and the power 10W, pressure 650mTorr, deposition rate about 2nm / s. The deposition of aluminum oxide re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
depthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a phase-changing material-based adjustable slow light device. The adjustable slow light device comprises a dielectric substrate, a phase-changing material, a dielectric protection layer and a metal structure which are sequentially arranged. The invention also provides fabrication method and application of the phase-changing material-based adjustable slow light device. The phase-changing material and a metal periodic pattern structure are combined, and control of slow light of the device is achieved by various stimulation means such as light, power and by means of various advantages of wide dielectric constant change frequency range, large change quantity and versatile phase-changing conditions of the phase-changing material. Moreover, the device also has the characteristics of wide integration, wide working frequency range and processing flexibility.

Description

Technical field [0001] The invention relates to the field of optical devices, in particular to an adjustable slow light device based on a phase change material, and a preparation method and application thereof. Background technique [0002] Slow light effect is an abnormal physical phenomenon existing in high-dispersion devices and media. One of the methods to realize slow light is to design a periodic structure on the dielectric material, and use the resonance of the structure to cause a huge change in the speed of the resonance center group to generate slow light. The most commonly used method is electromagnetically induced transparency (EIT) technology, and the selected structure is the EIT-like structure. At present, the slow-light effect has unique research and practical value in scientific fields such as quantum optics and nonlinear optics, as well as application fields such as optical information storage and optical switches. [0003] In recent years, modulated slow-light ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01G02F1/00
CPCG02F1/0009G02F1/0102
Inventor 顾长志李策朱维张忠山李俊杰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com