Manufacturing method of SOI

Abstract

The invention provides a manufacturing method of SOI. The manufacturing method comprises the following steps: oxidizing the first surface of a first silicon wafer to form a first oxide layer on the first silicon wafer; bonding the second silicon wafer with the first oxide layer and bonding the first silicon wafer and the second silicon wafer so as to obtain a bonding wafer; annealing the bonding wafer, wherein the annealing temperature is the first temperature and the annealing time is the first time; oxidizing the bonding wafer to form a second oxide layer in the circumferential direction ofthe first oxide layer; and chamfering he oxidized bonding wafer and polishing the boding wafer to the preset thickness so as to obtain the SOI. According to the manufacturing method of the SOI, the second oxide layer is formed around the first oxide layer so that the unbonded part between the first silicon wafer and the second silicon wafer is filled by the second oxide layer, the bonding force between the first silicon wafer and the second silicon wafer is increased, the edge of the bonding wafer is prevented from tearing or cracking, the amount of waste products is reduced and the yield of the SOI is improved; and the force bearing of the polished surface is more uniform.

Description

technical field [0001] The present invention relates to the technical field of SOI, in particular, to a method for manufacturing SOI. Background technique [0002] At present, with the continuous development of silicon material processing technology, people have paid more and more attention to the processing quality of wafers. [0003] In the related art, when manufacturing SOI (Silicon-On-Insulator, silicon on an insulating substrate), it is usually realized by bonding, that is, an oxide layer is formed on at least one of the two silicon wafers, and at room temperature The two silicon wafers are bonded together to form a bonded body. However, due to the poor bonding force at the edge of the bonding surface, it is easy to cause the edge of the silicon wafer to tear or crack during the subsequent process, and even lead to the scrapping of the SOI, which reduces the finished product of the SOI. Rate. Contents of the invention [0004] The present invention aims to solve at...

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Problems solved by technology

[0003] In the related art, when manufacturing SOI (Silicon-On-Insulator, silicon on an insulating substrate), it is usually realized by bonding, that is, an oxide layer is formed on at least one of the two silicon wafers, and at room temperature The two silicon wafers are bonded together to form a bonded body. However, due to the poor bonding force at the edge of the bonding surface, it is easy to cause the edge of the silicon wafer to tear or crack during the subsequent process, and even lead to the scrapping of the SOI, which reduces the finished product of the SOI. Rate

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