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Method for texturing silicon wafer by repeatedly utilizing nitrogen-free black silicon cleaning solution

A cleaning fluid, black silicon technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problem of high cost, and achieve the effect of reducing the cost of texturing and wastewater treatment

Active Publication Date: 2020-01-17
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, for the conventional nitrogen-containing black silicon cleaning solution, after reaching its corresponding service life, the wastewater treatment process usually includes corresponding denitrification treatment, which is costly

Method used

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  • Method for texturing silicon wafer by repeatedly utilizing nitrogen-free black silicon cleaning solution
  • Method for texturing silicon wafer by repeatedly utilizing nitrogen-free black silicon cleaning solution
  • Method for texturing silicon wafer by repeatedly utilizing nitrogen-free black silicon cleaning solution

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Step 1: Take a P-type diamond wire-cut monocrystalline silicon wafer with a size of 156mm×156mm (resistivity 1-3Ωcm), and immerse it in the acidic black silicon texturing solution in the texturing tank for texturing, and the reaction temperature is 45°C , the reaction time is 5 minutes, and discretely distributed copper metal particles are formed on the surface of the silicon wafer; among them, the acidic black silicon texturing solution is prepared from copper nitrate, hydrofluoric acid and hydrogen peroxide, the total volume is 200L, and the concentration of copper ions is 5mmol / L, the concentration of hydrofluoric acid is 4.5mol / L, and the concentration of hydrogen peroxide is 0.6mol / L.

[0052] Step 2: Take out the textured silicon wafer obtained in Step 1, wash it with deionized water, and dry it with high-purity nitrogen.

[0053] Step 3: Wash the dried silicon wafer obtained in Step 2 with a nitrogen-free black silicon cleaning solution for 3 minutes at 60°C to r...

Embodiment 2

[0062] Step 1: Take a P-type diamond wire-cut polysilicon wafer (resistivity 1-3Ωcm) with a size of 156mm×156mm, and immerse it in the acidic black silicon texturing solution in the texturing tank for texturing. The reaction temperature is 50°C. The time is 3 minutes, and discretely distributed copper metal particles are formed on the surface of the silicon wafer; among them, the acidic black silicon texturing solution is prepared from copper nitrate, hydrofluoric acid and hydrogen peroxide, the total volume is 300L, and the concentration of copper ions is 2mmol / L, the concentration of hydrofluoric acid is 3mol / L, and the concentration of hydrogen peroxide is 2mol / L.

[0063] Step 2: Take out the textured silicon wafer obtained in Step 1, wash it with deionized water, and dry it with high-purity nitrogen.

[0064] Step 3: Wash the dried silicon wafer obtained in Step 2 with a nitrogen-free black silicon cleaning solution for 3 minutes at 50°C to remove copper metal particles ...

Embodiment 3

[0070] Step 1: Take a P-type diamond wire-cut polycrystalline silicon wafer (resistivity 1-3Ωcm) with a size of 156mm×156mm, and immerse it in the acidic black silicon texturing solution in the texturing tank for texturing. The reaction temperature is 40°C. The time is 4 minutes, and discretely distributed copper metal particles are formed on the surface of the silicon wafer; the acidic black silicon texturing solution is prepared from copper nitrate, hydrofluoric acid and hydrogen peroxide, the total volume is 200L, and the concentration of copper ions is 0.5mmol / L, the concentration of hydrofluoric acid is 6mol / L, and the concentration of hydrogen peroxide is 1.5mol / L.

[0071] Step 2: Take out the textured silicon wafer obtained in Step 1, wash it with deionized water, and dry it with high-purity nitrogen.

[0072] Step 3: Wash the dried silicon wafer obtained in Step 2 with a nitrogen-free black silicon cleaning solution for 3 minutes at 25°C to remove copper metal partic...

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Abstract

The invention discloses a method for texturing a silicon wafer by repeatedly utilizing a nitrogen-free black silicon cleaning solution. The method comprises the following steps of (1) immersing the silicon wafer into a black silicon texturing solution containing copper salt, hydrofluoric acid and hydrogen peroxide for texturing; (2) cleaning the textured silicon wafer with the deionized water, andblow-drying the textured silicon wafer; (3) cleaning the dried silicon wafer with the nitrogen-free black silicon cleaning solution containing hydrogen peroxide and one or more acids selected from hydrofluoric acid, hydrochloric acid, sulfuric acid and acetic acid; (4) cleaning the silicon wafer cleaned by the nitrogen-free black silicon cleaning solution with the deionized water, and blow-dryingto obtain the silicon wafer with a suede structure; and (5) repeating the steps (1) to (4) until the nitrogen-free black silicon cleaning solution reaches the service life, and preparing the black silicon texturing solution by taking the nitrogen-free black silicon cleaning solution reaching the service life as a raw material. According to the method, the nitrogen-free black silicon cleaning solution, especially the metal ions in the nitrogen-free black silicon cleaning solution, can be simply and effectively recycled, the texturing cost and the wastewater treatment cost are reduced, and themethod is green and environment friendly.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for making texture on a silicon chip by repeatedly using a nitrogen-free black silicon cleaning solution. Background technique [0002] With the gradual reduction of fossil energy reserves and the increasingly severe environmental problems, vigorously promoting the development and utilization of renewable energy and improving the energy structure have become the focus of current development. Solar energy is currently one of the most widely used clean energy sources, and the progress and development of the photovoltaic industry is of great significance to the adjustment and improvement of the energy structure. [0003] Black silicon technology is currently a research hotspot in the field of photovoltaics. It mainly achieves good light absorption in a wide range of wavelengths by forming a specific textured structure on the surface of silicon wafers. Black silicon technology...

Claims

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Application Information

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IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363H01L31/1804Y02P70/50
Inventor 刘尧平赵燕王燕杜小龙朱姚培唐磊蒋健王磊
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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