Ferroelectric material reconfigurable field effect transistor

Abstract

The invention discloses a ferroelectric material reconfigurable field effect transistor. The transistor includes a channel; a drain electrode arranged at one end of the channel; a source electrode arranged at the other end of the channel; a gate dielectric buffer layer arranged at the outer side of the channel, a ferroelectric material layer which wraps the outer side of the gate dielectric bufferlayer, a control gate and a polar gate which are arranged at the source electrode end and the drain electrode end respectively and at the outer side of the ferroelectric material layer, and an innerside wall and an outer side wall which are used for electrically isolating the control gate and the polar gate from the source electrode and the drain electrode. The ferroelectric material layer arranged at the outer side of the gate dielectric buffer layer can generate the polarized charges at the channel below the ferroelectric material layer, so that the control capability of the gate to the channel is improved, the turn-on voltage under a same gate voltage is increased, the sub-threshold swing of a device is reduced, and the static power consumption of the device is reduced. The gate dielectric buffer layer isolates the channel from the ferroelectric material, prevents the mutual diffusion of the channel and the ferroelectric material, and does not affect the polarization characteristics of the ferroelectric material layer.

Description

technical field [0001] The invention belongs to digital logic and storage devices in CMOS VLSI, and in particular relates to a ferroelectric material reconfigurable field effect transistor. Background technique [0002] With the continuous development of society and economy, the size of semiconductor devices is gradually reduced, especially in recent years, the feature size of semiconductor devices seems to have reached its physical limit. However, the requirements of economic development for semiconductor technology have not stopped, so more and more new devices are emerging. Reconfigurable Field Effect Transistor (RFET) is one of them. In this reconfigurable transistor device, the carrier polarity of the current in the on state can be changed by the voltage on the control gate. That is to say, an RFET device can not only realize the function of N-type field effect transistor, but also realize the function of P-type field effect transistor, and the use of RFET device is e...

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Problems solved by technology

[0004] Due to its special working mode, the general structure of RFET has a higher current switching ratio, but the disadvantages such as low on-state current from the tunneling current cause the delay time of the general structure of the RFET device to be longer when combining logic gates. And it is difficult to apply to radio frequency, microwave and other technologies

In addition, for small-sized devices such as RFETs, the increased integration brought about by the small size sacrifices its power consumption and the performance of the device working in the sub-threshold region

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