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Multi-finger gate structure-based terahertz radiation source device and regulation and control method thereof

A technology of terahertz radiation source and gate structure, applied in solid-state lasers and other directions, can solve the problems of limiting the development of terahertz application fields, lack of stability, high-power terahertz radiation source, etc., and achieve modulated miniaturization, easy miniaturization, high power effect

Pending Publication Date: 2020-01-10
HANGZHOU DIANZI UNIV FUYANG ELECTRONIC INFORMATION RES INST CO LTD
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Problems solved by technology

[0005] However, the current development of terahertz technology has also encountered some bottlenecks, for example, the lack of room temperature, stable, high-power, and miniaturized terahertz radiation sources, these problems seriously limit the development of terahertz applications

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  • Multi-finger gate structure-based terahertz radiation source device and regulation and control method thereof
  • Multi-finger gate structure-based terahertz radiation source device and regulation and control method thereof
  • Multi-finger gate structure-based terahertz radiation source device and regulation and control method thereof

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Embodiment Construction

[0032] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0033] For heterostructures based on III-V semiconductor materials, such as AlGaN / GaN materials, which are composed of a large number of particles, carriers move in the real background of these atoms, and carriers in these materials can be collectively excited to form The principle of plasmons can be referred to the following formula I:

[0034]

[0035] Where n0 is the two-dimensional electron gas concentration, e is the electron equivalent, m is the effective electron mass, ε is the relative permittivity, and W is the wavelength of the plasma wave.

[0036] Due to the mutual Coulomb interaction between the carriers, which has the characteristics of long-range interaction, the carrier density will be disturbed during the movement of the ca...

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Abstract

The invention discloses a multi-finger gate structure-based terahertz radiation source device and a regulation and control method thereof. The terahertz radiation source device comprises a channel layer, a channel providing layer, a source and a drain; a two-dimensional electron gas (2DEG) channel is generated inductively in the channel layer; two groups of gates are alternately arranged on the channel providing layer; when different voltages are respectively applied to the two groups of gates, the concentration of 2DEG in channel regions located below the two groups of gates and the concentration of 2DEG in channel regions located right below areas between any two adjacent gates are different; 2DEG concentration difference interfaces are formed between the channel regions; and if a voltage is loaded between the source and the drain, a standing wave oscillation structure with periodic concentration difference is constructed in the channel; and therefore, terahertz radiation is generated. The terahertz radiation source device has the advantages of easiness in excitation, high power, modulatability, convenience in miniaturization, light weight, easiness in integration and the like. The radiation frequency of the terahertz radiation source device can be adjusted within the range of 0.3THz-1.9THz. The terahertz radiation source device is suitable for being widely applied to multiple fields.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a terahertz radiation source device based on a multi-finger structure and a control method thereof, belonging to the technical field of semiconductors. Background technique [0002] Terahertz wave (submillimeter wave, far infrared wave) refers to electromagnetic radiation with a frequency between 0.1-10THz. Located between the mid-infrared and microwaves on the electromagnetic spectrum, it represents an important shift from the theory of transport by quantum mechanisms to the theory of bulk transport by classical mechanisms. [0003] Terahertz wave radiation has the following characteristics: Safety: Terahertz wave photon energy is small, only 10-3eV, will not cause photoionization of biological tissues, and is suitable for biomedical imaging; Penetration: Terahertz wave radiation can penetrate Through non-metal and non-polar materials, such as textiles, cardboard, plastic, wood and oth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 陈亮蔡勇刘国华程知群
Owner HANGZHOU DIANZI UNIV FUYANG ELECTRONIC INFORMATION RES INST CO LTD
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