A single photon si-apd detector and its manufacturing method

Abstract

The present invention proposes a single-photon Si-APD detector, comprising: an absorption region, a P+ contact region, an N+ contact region, an avalanche region, and a dielectric layer. The middle part of the surface of the P-type substrate is provided with an absorption region. A P+ contact area is provided, and a lower electrode is provided below the P+ contact area; stop rings are provided at both ends of the upper part of the absorption area; an avalanche area is provided in the middle of the upper part of the absorption area, and the avalanche area is composed of P-type impurities Formed by compensating doping with N-type impurities; an N+ contact region is arranged above the avalanche region; a guard ring is arranged on both sides of the avalanche region, and an upper electrode is arranged above the guard ring; an N+ contact region is arranged above the N+ contact region medium layer. The single-photon Si-APD detector has a wide avalanche region and few defects introduced in the manufacturing process, which can achieve high detection efficiency and low dark count device performance.

Description

technical field [0001] The invention relates to the field of photodetector chips, in particular to a single-photon Si-APD detector and a manufacturing method thereof. Background technique [0002] Single-photon detection, as a detection technology for extremely weak optical signals, has broad application prospects in the fields of quantum communication, astronomical photometry, medical imaging, and radar detection. In view of its huge scientific research value and strategic position, single-photon detection has become the current One of the hot spots in the field of photoelectric detection. As the core component of the detection system, the single-photon detector determines the performance parameters of the entire single-photon detection system. Therefore, designing a single-photon detector with high detection efficiency and low dark count is one of the key problems that need to be solved urgently. [0003] The single-photon silicon avalanche diode Si-APD is a special photo...

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Problems solved by technology

The width of the avalanche region prepared by the diffusion method is very narrow, and to achieve a high avalanche probability when the device is working requires a higher electric field strength in the avalanche region, such as Figure 5 As shown, while higher electric field strength will lead to band-to-band tunneling and defect-assisted tunneling, making the dark count larger

The width of the avalanche region prepared by the high-energy implantation method is wider, and the electric field intensity in the avalanche region is lower, such as Image 6 However, the bombardment of high-energy impurity ions in high-energy implantation will damage the silicon lattice and cause defects, which will also increase the dark count

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