Method for preparing double-layer perovskite manganese oxide film material on monocrystalline silicon substrate through epitaxial growth

A double-layer perovskite and epitaxial growth technology, applied in the field of magnetic materials, can solve the problem of difficulty in synthesizing double-layer perovskite thin films, and achieve the effects of low cost and simple preparation

Active Publication Date: 2019-12-17
HEBEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the mismatch between the crystal lattice of the single crystal silicon substrate and the perovskite structure, it is difficult to directly synthesize a double-layer perovskite structure film on this substrate.

Method used

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  • Method for preparing double-layer perovskite manganese oxide film material on monocrystalline silicon substrate through epitaxial growth
  • Method for preparing double-layer perovskite manganese oxide film material on monocrystalline silicon substrate through epitaxial growth
  • Method for preparing double-layer perovskite manganese oxide film material on monocrystalline silicon substrate through epitaxial growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Using pulsed laser deposition technology, using Si(100) substrate as the substrate, LaNiO was sequentially deposited at 600 °C 3 thin film, deposited at 750°C on the top layer of Pr(Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 film;

[0028] (1) Using the sol-gel method, calcining at 1200°C and 1400°C for 48 hours respectively, to prepare the LaNiO needed for the experiment 3 and Pr(Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 target.

[0029] (2) Put the single crystal Si (100) substrate into the preparation chamber of the pulsed laser deposition system, and evacuate the preparation chamber of the pulsed laser deposition system to ≤5×10 -4 Pa, heating the substrate to 600°C, with LaNiO 3 The block material is used as the target material, the laser voltage is 23.0KV, the deposition rate is 3HZ, and the deposition times are 4000 times. In-situ annealing for 5 minutes, then continue to heat up to 750 ° C, with Pr (Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 The block material is used as the target material...

Embodiment 2

[0032] Using pulsed laser deposition technology, using Si(100) substrate as the substrate, LaNiO was sequentially deposited at 650 °C 3 thin film, deposited at 750°C on the top layer of Pr(Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 film;

[0033] (1) Using the sol-gel method, calcining at 1200°C and 1400°C for 48 hours respectively, to prepare the LaNiO needed for the experiment 3 and Pr(Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 target.

[0034] (2) Put the single crystal Si(100) substrate into the preparation chamber of the pulsed laser deposition system, and vacuum the preparation chamber of the pulsed laser deposition system to ≤5×10 -4 Pa, heating the substrate to 650°C, with LaNiO 3 The block material is used as the target material, the laser voltage is 23.0KV, the deposition rate is 3HZ, and the deposition times are 4000 times. In-situ annealing for 5 minutes, then continue to heat up to 750 ° C, with Pr (Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 The block material is used as the target material, t...

Embodiment 3

[0037] Using pulsed laser deposition technology, using Si(100) substrate as the substrate, LaNiO was sequentially deposited at 700 °C 3 thin film, deposited at 750°C on the top layer of Pr(Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 film;

[0038] (1) Using the sol-gel method, calcining at 1200°C and 1400°C for 48 hours respectively, to prepare the LaNiO needed for the experiment 3 and Pr(Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 target.

[0039] (2) Put the single crystal Si(100) substrate into the preparation chamber of the pulsed laser deposition system, and vacuum the preparation chamber of the pulsed laser deposition system to ≤5×10 -4 Pa, heating the substrate to 700°C, with LaNiO 3 The block material is used as the target material, the laser voltage is 23.0KV, the deposition rate is 3HZ, and the deposition times are 4000 times. In-situ annealing for 5 minutes, then continue to heat up to 750 ° C, with Pr (Sr 0.1 Ca 0.9 ) 2 mn 2 o 7 The block material is used as the target material, t...

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Abstract

The invention discloses a method for preparing a double-layer perovskite manganese oxide film material on a monocrystalline silicon substrate through epitaxial growth by utilizing a buffer layer. Themethod comprises steps that (1) LaNiO3 and Pr(Sr0.1Ca0.9)2Mn2O7 target material required by an experiment are respectively prepared by adopting the sol-gel method; (2) a LaNiO3 thin film is depositedon the monocrystalline silicon (100) substrate as a buffer layer by adopting the pulse laser deposition technology, wherein the deposition temperature is 600-700 DEG C, the deposition oxygen pressureis 5Pa, the laser voltage is 23.0 KV, the deposition rate is 3HZ, and the deposition frequency is 4000 times; in-situ annealing is performed for 5 minutes, the Pr(Sr0.1Ca0.9)2Mn2O7 bulk material is used as the target material, the temperature continues to increase to 750 DEG C, the deposition oxygen pressure is 5 Pa, the laser voltage is 23.0 KV, the deposition rate is 3 HZ, the deposition frequency is 500-15000 times, and the Pr(Sr0.1Ca0.9)2Mn2O7 film is grown in an epitaxial mode. The method is advantaged in that the method is simple in process, high in controllability and suitable for industrial production.

Description

technical field [0001] The invention relates to a method for preparing double-layer perovskite manganese oxide Pr(Sr) by epitaxial growth on a single crystal silicon substrate. 0.1 Ca 0.9 ) 2 mn 2 o 7 The thin film method belongs to the technical field of magnetic materials. Background technique [0002] Double-layer perovskite manganese oxide can be regarded as infinite layer perovskite structure manganese oxide (ABO 3 type) derived from the Ruddelsden-Popper series A n+1 mn n o 3n+1 In the case of n=2 in the compound, its structure consists of two manganese oxides (MnO 2 ) 2 Layers and insulating AO rock-salt layers are stacked alternately along the c-axis, with a quasi-two-dimensional crystal structure. The crystal structure of this type of material naturally has an insulating non-magnetic rock salt layer, which is isolated in the middle of the magnetically ordered perovskite layer. Due to the anisotropy of its structure, this type of material also has different...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12
CPCH10N50/01
Inventor 赵旭宋笑龙彭勃陈伟
Owner HEBEI NORMAL UNIV
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