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A microwave plasma chemical vapor deposition device

A technology of chemical vapor deposition and microwave plasma, which is applied in the direction of chemical reactive gas, gaseous chemical plating, chemical instruments and methods, etc., can solve the problem of uneven gas distribution on the surface of the sample table, etching of the dielectric window, and poor focusing ability and other problems, to achieve the effect of solving the problem of plasma etching, good homogenization effect, and realizing the feeding of high-power microwave

Active Publication Date: 2021-11-09
广东众元半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to propose a microwave plasma chemical vapor deposition device, which overcomes the problems existing in the existing devices to varying degrees: dielectric window etching, poor focusing ability, unreliable sealing, and uneven gas distribution on the surface of the sample stage. disadvantages, enabling high-quality, large-area diamond film growth

Method used

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  • A microwave plasma chemical vapor deposition device
  • A microwave plasma chemical vapor deposition device
  • A microwave plasma chemical vapor deposition device

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Effect test

Embodiment 1

[0033] Such as figure 1 As shown, a microwave plasma chemical vapor deposition device of the present invention includes: the reaction chamber 1 includes an upper chamber 21 and a lower chamber 22, the bottom of the reaction chamber 1 is provided with a sample stage 4 for placing a substrate 8, and the reaction chamber 1 The top is provided with a central axis 3, the reaction chamber 1 and the central axis 3 form a quasi-coaxial waveguide 2, the central axis 3 extends into the reaction chamber, and the side of the central axis facing the sample stage 4 is provided with a concave structure surface 7; the reaction chamber 1. A horizontal air inlet 11 and a horizontal air outlet 12 are provided; in the coaxial waveguide 2, a sealing insulating member 9 and an insulating support member 33 are arranged; the lower end surface of the central axis 2 is lower than the sealing The lower end surface of the insulating member 9 and the lower end surface of the insulating support member 33; ...

Embodiment 2

[0039] Such as figure 2 As shown, the concave structure surface 7 of the central axis 3 adopts a cylindrical concave surface, and many chamfers and fillets are added to the cylindrical concave surface 7 . Meanwhile, the sealing insulating part 9 is located between the central shaft 3 and the upper cavity 21 , and the insulating support 33 is located between the central shaft 3 and the lower cavity 22 . These two points are the differences between this embodiment and embodiment 1.

[0040] The change of the shape of the surface 7 of the concave structure has a certain influence on the electric field intensity and the plasma density above the center of the sample stage 4 .

[0041] The sealing insulator 9 is positioned between the central shaft 3 and the upper cavity 21, and the insulating support 33 is positioned between the central shaft 3 and the lower cavity 22, and the pre-loaded compression force is also sufficient when there is no vacuum in the cavity. Sufficient for a...

Embodiment 3

[0043] Such as image 3 As shown, the sample stage 4 can be adjusted up and down, and can be rotated. These two points are the differences between this embodiment and embodiment 1. The up and down adjustment of the sample stage 4 can adjust the resonant frequency of the reaction chamber 1 and can adjust the form of the plasma. The sample stage 4 can be rotated, and the gas flow rate of the gas inlet 11 is matched with the rotation speed of the sample stage 4, which can realize the homogenization of the reaction gas on the surface of the substrate 8, and can better realize the uniform growth of the diamond film, especially for large-area substrates. The doping uniformity of the bottom, the improvement effect is more obvious.

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Abstract

The invention discloses a microwave plasma chemical vapor deposition device, which comprises an upper cavity, a lower cavity, a central axis, a sample stage, a sealing insulating part, an insulating supporting part, an air inlet and an air outlet. The central axis is arranged above the reaction cavity, and forms a microwave feeding coaxial waveguide with the reaction cavity. The sample stage arranged under the reaction chamber is used for placing the substrate, and the central axis facing the side of the sample stage is provided with a concave structure surface. The sealing insulator and the insulating support are arranged in the coaxial waveguide, and the lower end surface of the central axis is lower than the lower end surface of the sealing insulator and the lower end surface of the insulating support. bulk etching. The gas inlet and gas outlet adopt a horizontal gas inlet and outlet method, which is conducive to the formation of high-quality and high-uniform epitaxial growth on the substrate. The invention solves the problem of high-power microwave feeding in the reaction chamber, realizes stable and reliable vacuum sealing, and ensures the uniformity of reaction gas at the same time.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular provides a high-power microwave plasma chemical vapor deposition device that can be applied to diamond film preparation. Background technique [0002] Diamond film has many advantages such as high hardness, good thermal conductivity, small thermal expansion coefficient, high light transmittance, excellent electrical properties, good dielectric properties, etc. Devices and other fields have broad application prospects. At present, the most commonly used methods for preparing diamond films are hot wire chemical vapor deposition (HFCVD), direct current arc plasma jet chemical vapor deposition (DC arc plasma jet CVD) and microwave plasma chemical vapor deposition (MPCVD). kind. Among the three methods, the MPCVD method is characterized by good controllability of the diamond film deposition process and no pollution of the discharge electrode. It i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/08C30B25/14C30B29/04C23C16/27C23C16/44C23C16/517C23C16/511C23C16/513C23C16/455
CPCC23C16/274C23C16/276C23C16/455C30B25/08C30B25/14C30B29/04
Inventor 刘胜沈桥甘志银
Owner 广东众元半导体科技有限公司
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