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Perovskite quantum dot film and preparation method thereof, and device

A thin-film preparation and perovskite technology, which is applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of high roughness of perovskite films, low device efficiency, and agglomeration of quantum dots, and achieve luminescence. Adjustable wavelength, improved conductivity, and good film-forming properties

Active Publication Date: 2019-12-03
NANJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The synthesis method of this kind of quantum dots is complicated, and the quantum dots synthesized in the process of spin-coating to prepare the film are prone to agglomeration, resulting in large roughness of the perovskite film, more holes, and low device efficiency.
Although the film quality of perovskite can be improved by adding PVDF and other methods, the operation process is complicated and the device efficiency is limited.
In addition, due to the addition of long-chain alkylamines and alkyl acids as ligands, the conductivity of perovskite films is poor, which limits the improvement of device performance.
Although short-chain organic ligands can be added in the process of synthesizing quantum dots by traditional methods, it will lead to poor dispersion of perovskite quantum dots, and it is difficult to further improve the fluorescence quantum efficiency and device efficiency of the film.

Method used

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  • Perovskite quantum dot film and preparation method thereof, and device
  • Perovskite quantum dot film and preparation method thereof, and device
  • Perovskite quantum dot film and preparation method thereof, and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1 Preparation of in-situ growth perovskite quantum dot material.

[0044] Will C 8 h 19 N(octylamine), CH 3 NH 2 Br(MABr) and PbBr 2 The precursor solution was formulated at a molar ratio of 1:1.5:0.625, and the anti-solvent was mixed with isopropanol (IPA) and n-butanol (NBA) at a volume ratio of 5:3. The precursor solution was spin-coated on the PVK substrate, and the anti-solvent was added dropwise during the spin-coating process to accelerate the film formation of the perovskite film, and the perovskite quantum dot film was obtained after annealing.

[0045] Such as image 3 As shown, the photoluminescence peaks of this quantum dot film are respectively located at 473nm and 474nm before and after annealing, and have ideal thermal stability. Figure 4 The surface morphology (AFM) of the film shows that this kind of quantum dot perovskite material has good film-forming property (RMS=7.4nm).

Embodiment 2

[0046] Example 2 Preparation of in-situ growth perovskite quantum dot material.

[0047] Will C 5 h 13 N(amylamine), C 8 h 19 N(octylamine), CH 3 NH 2 Br(MABr) and PbBr 2 The precursor solution was formulated at a molar ratio of 0.2:0.8:1.5:0.625, and the anti-solvent was mixed with isopropanol (IPA) and n-butanol (NBA) at a volume ratio of 5:3. The precursor solution was spin-coated on the PVK substrate, and the anti-solvent was added dropwise during the spin-coating process to accelerate the film formation of the perovskite film, and the perovskite quantum dot film was obtained after annealing.

[0048] As shown in Table 1, the perovskite quantum dot film can achieve a photoluminescence quantum efficiency (PLQE) of 71.1% under the optimized film-forming conditions such as PVK rotation speed, perovskite rotation speed and anti-solvent addition time.

[0049] Table 1 Effect of preparation process on photoluminescence quantum efficiency of perovskite quantum dot film

...

Embodiment 3

[0051] Example 3 Preparation of traditional perovskite quantum dot materials and light-emitting devices.

[0052] Figure 5 Shown is the traditional method for preparing perovskite quantum dots: using long-chain ligands, reprecipitation method to obtain MAPbBr 3 Preparation process of quantum dots. With THF as anti-solvent, Pb(Ac) 2 , OA and stearylamine were added into THF at a molar ratio of 2.6:2.5:1 and stirred to form a precursor solution for later use. MABr was dissolved in DMF and then slowly added dropwise to the above precursor solution to react to form a quantum dot solution, which was transferred to a centrifuge tube and centrifuged several times at high speed with isopropanol to obtain clarified quantum dots. The quantum dot solution was spin-coated on the PEDOT:PSS / PVK substrate, and the perovskite quantum dot film was obtained after annealing.

[0053] The surface of this kind of quantum dot perovskite material is rough, and it is difficult to obtain a relati...

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Abstract

The invention discloses a perovskite quantum dot film and a preparation method thereof, and a device. The preparation method of the perovskite quantum dot film comprises the following steps of: dissolving AX, BX2 and a short-chain organic ligand in a solvent to obtain a perovskite ABX3 precursor solution, wherein A is a metal cation or an alkylammonium ion, B is a divalent metal cation, and X is ahalogen anion; in the spin-coating process, combining an anti-solvent method for in-situ growth of a perovskite quantum dot film, and performing heating annealing. The perovskite quantum dot film anda preparation method thereof, and the device have the advantages that the perovskite quantum dots grow in situ in the spin-coating preparation process of the thin film, the thin film is good in film-forming property, high in fluorescence quantum efficiency, simple in preparation process and adjustable in light-emitting wavelength, and short-chain organic ligands can be adopted, so that the conductivity of the quantum dot thin film is improved, and the preparation method is beneficial to preparation of a more efficient and stable perovskite light-emitting diode.

Description

technical field [0001] The invention relates to a perovskite light-emitting device, in particular to a high-efficiency and stable perovskite quantum dot thin film, a preparation method and a device thereof. Background technique [0002] Perovskite light-emitting devices have developed rapidly in recent years, and the external quantum efficiency (EQE) of light-emitting diodes based on three-dimensional perovskite and multi-quantum well perovskite has exceeded 10%. Perovskite quantum dots, as a type of perovskite light-emitting materials, have the advantages of high color saturation and high fluorescence quantum efficiency, but the efficiency of light-emitting devices based on perovskite quantum dots is still low. [0003] The traditional preparation method of perovskite quantum dot film is to first synthesize the precursor solution by adding stabilizers such as oleylamine and oleic acid and surfactants, and then precipitate quantum dot crystals by adding them into poor solven...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/30H10K50/00H10K71/00
Inventor 王建浦王娜娜黄维徐文杰
Owner NANJING UNIV OF TECH
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