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Overlay precision correction method

A technology of overlay accuracy and overlay error, which is applied in microlithography exposure equipment, optics, instruments, etc., and can solve the problem of large overlay error

Active Publication Date: 2019-12-03
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide an overlay accuracy correction method to solve the problem of excessive overlay error during photolithography

Method used

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Embodiment Construction

[0037] The overlay precision correction method proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0038] The simple model in the current prior art is a linear correction model, which usually uses six parameters: translation parameters in the X and Y directions; contraction or enlargement parameters in the X and Y directions; rotation parameters; and diagonal distortio...

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Abstract

The invention provides an overlay precision correction method. The method comprises the following steps of providing a mask plate on which a mask plate pattern and a cutting channel forming region areformed, and arranging at least eight pairs of alignment marks in the cutting channel forming region; exposing the mask plate by using an exposure machine bench; collecting all alignment mark data inan exposure region; acquiring overlay error data in the exposure region according to the alignment mark data; and adjusting photoetching parameters of the exposure machine bench according to the overlay error data so as to correct overlay precision. The at least eight pairs of alignment marks are arranged in the cutting channel forming region to obtain the overlay error data in the exposure regionso as to introduce a correction amount of a high-order number, and high-order correction in the exposure region can be realized on the basis of linear correction so that the overlay errors are reduced, and overlay precision is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an overlay accuracy correction method. Background technique [0002] As the size of semiconductor devices continues to shrink, devices have higher requirements for overlay alignment. In the current correction of overlay accuracy, for the dielectric layer that needs to be ion implanted or etched, in the exposure area, the mask There is only a pair of alignment marks on the plate and the medium layer. The correction obtained by the alignment marks can only be a linear correction, and the smaller units inside the exposure area cannot be corrected. The ordinary linear correction of the exposure machine cannot be very fast. Correct the error between the actual grid and the ideal grid. [0003] At present, the usual practice in this field is to rely on the results of overlay error measurement to correct the inside of the exposure area, and feed the compensation dat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70516G03F7/70633
Inventor 王敏王海舟
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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