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Copper seed etching solution used for wafer level package

A technology of wafer-level packaging and etching solution, which is applied in the field of materials, can solve problems such as volatile, unstable hydrogen peroxide system, and rapid failure of copper etching solution, and achieve the effect of reducing the impact of side erosion

Inactive Publication Date: 2019-11-26
成功环保科技(南通)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies in the above-mentioned technologies, the present invention provides a copper seed etchant for wafer-level packaging. The copper etch additive is used to replace the traditional copper etchant to solve the problem of the unstable hydrogen peroxide system in the existing system, which can Effectively prevent the problem of quick failure of copper etching solution caused by the volatilization of hydrogen peroxide, and further improve the reliability of electronic products

Method used

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  • Copper seed etching solution used for wafer level package
  • Copper seed etching solution used for wafer level package
  • Copper seed etching solution used for wafer level package

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The formula consists of the following:

[0045] Hydrogen peroxide: 40g / L;

[0046] Ethylene glycol monobutyl ether: 2g / L;

[0047] Concentrated sulfuric acid: 20g / L;

[0048] Oxalic acid: 20g / L;

[0049] Copper ion: 30g / L;

[0050] Chloride ion: 1g / L

[0051] Taking 1L capacity as an example, weigh 40g hydrogen peroxide, 2g ethylene glycol monobutyl ether, 20g concentrated sulfuric acid, 20g oxalic acid, 30g copper sulfate, 1g chloride ion, add deionized water to a volume of 1L, mix and stir evenly, put Into the constant temperature water bath for etching test.

[0052] Etching result:

[0053]

[0054]

[0055] It can be seen from the etching results that the etching rate is fast when the etching temperature is 45°C, and the amount of side etching on one side reaches 1.4 μm.

Embodiment 2

[0057] The formula consists of the following:

[0058] Etching temperature: 35°C;

[0059] Ethylene glycol monobutyl ether: 2g / L;

[0060] Concentrated sulfuric acid: 20g / L;

[0061] Oxalic acid: 20g / L;

[0062] Copper ion: 30g / L;

[0063] Chloride ion: 1g / L

[0064] Taking 1L capacity as an example, weigh 2g ethylene glycol monobutyl ether, 20g concentrated sulfuric acid, 20g oxalic acid, 30g copper sulfate, 1g chloride ion, add deionized water to a volume of 1L, mix and stir evenly, and put it in a constant temperature water bath Etch test in pot.

[0065] Etching result:

[0066] Hydrogen peroxide concentration (g / L) 20 40 60 Etching time (s) 250 164 128 Unilateral undercut (μm) 1.3 1.2 2.4

[0067] It can be seen from the etching results that the higher the concentration of hydrogen peroxide, the shorter the etching time, but the amount of unilateral side etching will also increase accordingly. The concentration of hydrogen peroxide ...

Embodiment 3

[0069] The formula consists of the following:

[0070] Etching temperature: 35°C;

[0071] Hydrogen peroxide: 40g / L;

[0072] Ethylene glycol monobutyl ether: 2g / L;

[0073] Concentrated sulfuric acid: 20g / L;

[0074] Oxalic acid: 20g / L;

[0075] Chloride ion: 1g / L

[0076] Taking 1L capacity as an example, weigh 40g hydrogen peroxide, 2g ethylene glycol monobutyl ether, 20g concentrated sulfuric acid, 20g oxalic acid, 1g chloride ion, add deionized water to a volume of 1L, mix and stir evenly, and put it into a constant temperature water bath etch test.

[0077] Etching result:

[0078] Copper ion(g / L) 0 10 20 30 Etching time (s) 149 152 160 162 Unilateral undercut (μm) 1.2 1.3 1.2 1.4

[0079] Appropriately increasing the concentration of copper ions to the range of 1-30g / L can effectively increase the etching rate, but when the concentration of copper ions is too high, the copper ions in the solution are easily hydrolyzed, which is...

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Abstract

The invention discloses a copper seed etching solution used for wafer level package. The etching solution comprises the following components, 40-60g / L of hydrogen peroxide, 5-35g / L of inorganic acid,5-35g / L of organic acid, 1-30g / L of copper ions, 1-2g / L of chloride ions and 1-2g / L of surface active agents according to the concentration proportion. The components are mixed in proportion, the mixing reaction temperature is between 30 DEG C and 50 DEG C, the reaction time is 1s-400s, and the copper seed etching solution is formed after mixing. Chelating agents formed by mixing the hydrogen peroxide and the inorganic acid and the copper ions can be subjected to chelation to form water-soluble complexes, so that equilibrium is reached; and the chloride ions play a role in maintaining the PH value of a system in the solution, maintains charge balance of the system in the etching process and prolongs the service life of the etching solution. The copper seed etching solution has the characteristics of being stable in performance, suitable for superfine circuits, small in lateral erosion and hardly corrosive to copper and aluminum.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a copper seed etchant for wafer-level packaging. Background technique [0002] Wafer (Wafer) refers to the silicon chip used in the production of silicon semiconductor integrated circuits. Because of its circular shape, it is called a wafer; it can be processed into various circuit element structures on a silicon wafer, and becomes a circuit with specific electrical properties. function IC products. IC products are the basic original devices that are inseparable from the modern information society, and are widely used in all aspects of our lives. [0003] Wafer-level packaging (WLP) is an important part of the semiconductor industry chain, and it is also a fast-growing industry in my country. It is a chip that already has some circuit microstructures on it and another chip that has been corroded with a cavity. or physically bonded together. The bonding process and technology ...

Claims

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Application Information

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IPC IPC(8): C23F1/18
CPCC23F1/18
Inventor 王缘满姚玉王红
Owner 成功环保科技(南通)有限公司
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