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SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof

A driving circuit and power device technology, which is applied in the field of power electronics, can solve problems such as the small optional range of driving negative voltage, the inability to adjust the turn-off gate resistance, and the inability to adjust the turn-off speed of power devices, so as to achieve short drive circuits and lighten effect, the effect of small gate parasitic inductance

Pending Publication Date: 2019-11-22
ELECTRIC POWER RES INST OF STATE GRID ZHEJIANG ELECTRIC POWER COMAPNY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An existing SiC power device drive circuit, such as figure 1 As shown, due to the small positive threshold voltage and negative safety voltage of the SiC power device, the optional range of the driving negative voltage is small; and the driving circuit cannot adjust the turn-off gate resistance, so the turn-off of the power device cannot be adjusted. speed

Method used

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  • SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof
  • SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof
  • SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof

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Experimental program
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Embodiment 1

[0043] This embodiment provides a SiC power device drive circuit capable of suppressing bridge arm crosstalk, such as figure 2 As shown, the bridge arm includes the upper tube Q 1 and down tube Q 2 , upper tube Q 1 connect Q 1 drive circuit, lower tube Q 2 connect Q 2 Drive circuit. In the figure, the upper tube Q 1 The equivalent circuit includes the upper switch Q 1 The gate equivalent resistance R G1H , Gate-drain junction capacitance C GDH , Gate-source junction capacitance C GSH , Drain-source junction capacitance C DSH and the body diode D 1 . down tube Q 2 The equivalent circuit includes downside Q 2 The gate equivalent resistance R G1L , Gate-drain junction capacitance C GDL , Gate-source junction capacitance C GSL , Drain-source junction capacitance C DSL and the body diode D 2 .

[0044] The Q 1 The drive circuit includes an upper transistor G pole drive circuit, an upper transistor S pole driver circuit, and an upper capacitor C arranged betwee...

Embodiment 2

[0053] This embodiment provides a control method for a SiC power device drive circuit, which divides one cycle of the SiC power device drive circuit in Embodiment 1 into t 0 ~t 1 , t 1 ~t2 , t 2 ~t 3 , t 3 ~t 4 Four stages, down tube Q 2 Active tube, top tube Q 1 The control logic for passive management is as follows, and the specific control logic is as follows image 3 shown.

[0054] t 0 ~t 1 The first stage: the second lower tube G pole switch tube S 2_L and the second lower tube S pole switch tube S a2_L conduction, lower tube Q 2 The gate-source voltage of the gate is 0V, and it is in an off state at this time; the second upper tube G-electrode switch tube S 2_H and the first upper transistor S pole switch S a1_H conduction, the upper transistor Q 1 The gate-to-source voltage is -U ss_H , to prevent downpipe Q in the second stage 2 The moment of opening Q 1 Prepare for the gate-to-source forward voltage spike to exceed the threshold voltage;

[0055] t...

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Abstract

The invention discloses a SiC power device driving circuit capable of suppressing bridge arm crosstalk and a control method thereof. The driving circuit comprises a G-pole driving circuit, an S-pole driving circuit and a capacitor arranged between the G-pole driving circuit and the S-pole driving circuit. The G-pole drive circuit comprises a positive voltage power supply, a first G-pole switch tube, a second G-pole switch tube, a switch-on resistor and a switch-off resistor, wherein the first G-pole switch tube, the second G-pole switch tube, the switch-on resistor, the switch-off resistor andthe second G-pole switch tube are used for controlling the G-pole voltage state and are sequentially connected in series. The S-pole drive circuit comprises a negative voltage power supply, a first S-pole switch tube and a second S-pole switch tube, wherein the first S-pole switch tube and the second S-pole switch tube control the S-pole voltage state. The negative-voltage power supply, the firstS-pole switch tube and the second S-pole switch tube are sequentially connected in series. According to the invention, the influence of the gate-source parallel capacitor on the switching speed is reduced, and the problem of bridge arm crosstalk is effectively inhibited.

Description

technical field [0001] The invention belongs to the technical field of power electronics and relates to a SiC power device, in particular to a SiC power device drive circuit capable of suppressing bridge arm crosstalk and a control method thereof. Background technique [0002] SiC power devices have high operating voltage, fast switching speed, and high operating temperature, which are conducive to improving the efficiency and power density of power electronic converters, and have broad application prospects. However, the high switching speed of SiC power devices will inevitably result in high voltage / current change rates, so that the influence of parasitic parameters on the switching characteristics of SiC power devices becomes obvious, and the resulting bridge arm crosstalk problem seriously affects the reliability of SiC power devices. This limits the advantage of high switching speeds for SiC power devices. Therefore, in order to realize the high-speed and reliable appl...

Claims

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Application Information

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IPC IPC(8): H02M1/088
CPCH02M1/088H02M1/0038Y02B70/10
Inventor 陈骞王异凡陆翌裘鹏柯人观周竞宣佳卓许烽倪晓军丁超王朝亮郑眉
Owner ELECTRIC POWER RES INST OF STATE GRID ZHEJIANG ELECTRIC POWER COMAPNY
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