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A method for cleaning a silicon substrate

A silicon substrate and substrate technology, applied in cleaning methods and appliances, chemical instruments and methods, electrical components, etc., can solve the problems of poor cleaning effect of carbon nanotube root residues, easy to corrode oxide layer, etc., and achieve great promotion value , Excellent spinning performance, highly uniform effect

Active Publication Date: 2021-10-01
CONE SCI CITY GUANGZHOU ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a cleaning method for a silicon substrate, aiming at solving the problem that the existing cleaning technology is easy to corrode and damage the oxide layer on the surface of the silicon substrate, and the cleaning effect of the carbon nanotube root residue on the surface of the silicon substrate is not good

Method used

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  • A method for cleaning a silicon substrate
  • A method for cleaning a silicon substrate
  • A method for cleaning a silicon substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0054] Obtain 200 8-inch silicon substrates with residual carbon nanotubes and other impurities, and use high-temperature burning for processing. Specifically, the silicon substrate after carbon nanotube growth was placed in an oven, and the high-temperature burning temperature was set to 1450° C., and the burning treatment was performed for 30 minutes. Physically clean the silicon substrate after the high-temperature burning treatment; first wash and rinse with pure water for 4 minutes, and then use a flat-panel cleaning machine to scrub. On the roller of the machine, the silicon wafer is driven forward by the roller, and the front of the silicon wafer contacts the brush head rotating in the same direction as the roller, and the cleaning rate is 1min / piece. The silicon substrate after the physical cleaning treatment is dried, specifically, the drying temperature is 35° C., and the drying wind speed is 2.5 m / s, and then a reusable silicon substrate is obtained.

Embodiment 2

[0056] Obtain 200 8-inch silicon substrates with residual carbon nanotubes and other impurities, and use the first high-temperature burning to process. Specifically, place the silicon substrate after carbon nanotube growth in an oven, set the temperature of the first high-temperature burning to 650° C., and burn for 2 minutes. The silicon substrate burned at the first high temperature is subjected to a second high temperature burning treatment at 1500°C for 20 minutes. Physically clean the silicon substrate after the high-temperature burning treatment; first wash and rinse with pure water for 4 minutes, and then use a flat-panel cleaning machine to scrub. On the roller of the machine, the silicon wafer is driven forward by the roller, and the front of the silicon wafer contacts the brush head rotating in the same direction as the roller, and the cleaning rate is 1min / piece. The silicon substrate after the physical cleaning treatment is dried, specifically, the drying temperat...

Embodiment 3

[0058] Obtain 200 8-inch silicon substrates with residual carbon nanotubes and other impurities, and use the first high-temperature burning to process. Specifically, place the silicon substrate after carbon nanotube growth in an oven, set the temperature of the first high-temperature burning to 650° C., and burn for 2 minutes. The silicon substrate burned at the first high temperature is subjected to a second high temperature burning treatment at 1400°C for 25 minutes. Physically clean the silicon substrate after the high-temperature burning treatment; first wash and rinse with pure water for 4 minutes, and then use a flat-panel cleaning machine to scrub. On the roller of the machine, the silicon wafer is driven forward by the roller, and the front of the silicon wafer contacts the brush head rotating in the same direction as the roller, and the cleaning rate is 1min / piece. The silicon substrate after the physical cleaning treatment is dried, specifically, the drying temperat...

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Abstract

The invention provides a method for cleaning a silicon substrate, comprising the following steps: obtaining a silicon substrate with residual carbon nanotubes and other impurities, performing high-temperature burning treatment on the silicon substrate; The substrate is physically cleaned; the silicon substrate after the physical cleaning is blown dry, and then a reusable silicon substrate is obtained. After cleaning, the surface color of the silicon wafer is uniform, without spots and gray marks; the second carbon nanotube growth test shows that the output of carbon nanotubes reaches 91%-94% of the new silicon wafer, which basically meets the target requirements.

Description

technical field [0001] The invention belongs to a silicon chip cleaning process, in particular to a method for cleaning a silicon substrate. Background technique [0002] In recent years, with the in-depth research on carbon nanotubes and nanomaterials, the demand for carbon nanotubes is increasing, and its broad application prospects are constantly showing. Carbon nanotubes, also known as bucky tubes, are one-dimensional quantum materials with a special structure (the radial dimension is on the order of nanometers, the axial dimension is on the order of microns, and both ends of the tube are basically sealed). Carbon nanotubes are mainly coaxial tubes with several to tens of layers of carbon atoms arranged in a hexagonal shape. A fixed distance is maintained between layers, about 0.34nm, and the diameter is generally 2 to 20nm. And according to the different orientations of the carbon hexagon along the axial direction, it can be divided into three types: zigzag, armchair ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02B08B7/00
CPCB08B7/0071H01L21/02041
Inventor 辛培培
Owner CONE SCI CITY GUANGZHOU ADVANCED MATERIALS CO LTD
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