Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of transparent nickel oxide film varactor

A transparent oxidation and varactor technology, which is applied in capacitor manufacturing, variable voltage capacitors, capacitors, etc., can solve the problem that the transparency of varactors is only 60%, and achieve excellent visible light transmittance, high tuning rate, The effect of good application prospects

Inactive Publication Date: 2019-11-22
TIANJIN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to its good light transmittance and dielectric properties, NiO thin film has prepared nickel oxide thin film varactors with high tuning characteristics, but the disadvantage is that the transparency of varactors is only 60%, and the tuning performance is 70%.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of transparent nickel oxide film varactor
  • Preparation method of transparent nickel oxide film varactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) Clean the substrate

[0034] Put the ITO conductive glass substrate attached on the surface into acetone and alcohol to ultrasonically clean it for 15 minutes respectively, rinse it with deionized water and dry it in nitrogen flow;

[0035] (2) Preparation of NiO thin film

[0036] (a) put the dried ITO conductive glass substrate of step (1) on the magnetron sputtering sample stage, install the purchased metal Ni target material on the corresponding DC sputtering target, and the purity of the metal NiO target material is greater than 99.99%, the background vacuum of the magnetron sputtering system is pumped to 6.0×10 -6 Torr, then turn on the substrate heating and set it to 500°C;

[0037] (b) Using high-purity Ar and O2 as sputtering gases, O 2 : Ar=3:1, the sputtering pressure is 10mTorr, the sputtering power is 140W, a NiO film with a thickness of 200nm is deposited on ITO, and its thickness can be controlled by adjusting time, air pressure, oxygen-argon ratio...

Embodiment 2

[0048] The post-annealing temperature of NiO in Example 2 is 600° C., the annealing time is 10 min, and other process steps and process parameters are the same as those in the example.

[0049] It is tested that the tuning rate of the NiO varactor in Example 2 is 82.3% at positive bias, 10.4% at negative bias, and 72.4% at light transmittance.

Embodiment 3

[0051] The thickness of NiO in Example 3 is 100 nm, and other process steps and process parameters are the same as those in Example 3.

[0052] It is tested that the tuning rate of the NiO varactor in Example 3 is 88.5% at positive bias, 11.6% at negative bias, and 79.5% at light transmittance.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a transparent nickel oxide film varactor, which comprises the following steps of: cleaning a substrate, preparing a NiO film by adopting a magnetron sputtering method under the conditions that the sputtering air pressure is 10 mTorr and the sputtering power is 50-250 W, and performing annealing treatment; preparing a NiO film on a transparent conductive glass substrate, attaching Cu to the surface of the NiO film on the transparent conductive glass substrate by adopting an evaporation method, and performing iodination treatment on the transparentconductive glass substrate with the Cu film to obtain a CuI film serving as a top electrode, thereby preparing the transparent nickel oxide film varactor with p-type copper iodide serving as the top electrode. According to the invention, the tunability reaches 90.6% under positive bias voltage, the tunability is only 8.3% under negative bias voltage, the average transmittance is 75.5%, and the application prospect is good.

Description

technical field [0001] The invention relates to electronic information materials and components, in particular to a novel transparent NiO film varactor and a preparation method thereof. Background technique [0002] In recent decades, microwave dielectric ceramic materials have received great attention due to their excellent properties such as high dielectric constant, low dielectric loss, and small frequency temperature coefficient. Dielectric tuning materials refer to a class of nonlinear dielectric materials whose dielectric constant changes with the change of bias voltage. Based on this characteristic, this material is widely used in phase shifters, dielectric resonators, and dielectric filters. Devices, microwave dielectric antennas, dielectric frequency stabilized oscillators, dielectric waveguide transmission lines, etc. These devices have been applied in many communication-related fields such as satellite communication, mobile communication, radio and television, ra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G13/00H01G7/06C23C14/35C23C14/08C23C14/58C23C14/24C23C14/18
CPCC23C14/0036C23C14/085C23C14/18C23C14/24C23C14/35C23C14/5806C23C14/5846H01G7/06H01G13/00
Inventor 李玲霞彭伟于仕辉杨盼
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com