Novel gallium telluride(GaTe)-based surface-enhanced Raman substrate and preparation method thereof
A surface-enhanced Raman and gallium telluride technology, used in Raman scattering, measuring devices, instruments, etc.
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[0019] The invention discloses a novel GaTe-based surface-enhanced Raman substrate, and the device structure is SiO from bottom to top. 2 / Si base layer, Ti layer, Au layer 1, two-dimensional thin GaTe layer 2 and Au nanoparticle layer, two-dimensional thin GaTe layer 2 is 3-10nm, two-dimensional thin GaTe layer 2 and Au layer 1 are formed Heterostructure, a two-dimensional thin GaTe layer 2 self-assembled to form a layer of Au nanoparticles.
[0020] The brief preparation steps of the present invention are as follows:
[0021] 1) On SiO 2 / Grow a Ti or Cr layer on the Si base layer, and then grow an Au layer 1;
[0022] 2) Preparation of thin-layer GaTe two-dimensional materials;
[0023] 3) transferring the prepared two-dimensional thin GaTe layer 2 onto the Au layer 1;
[0024] 4) Prepare gold particles on the two-dimensional thin GaTe layer 2 to form an Au nanoparticle layer.
[0025] Below in conjunction with the accompanying drawings of the description, the technica...
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