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A kind of preparation method of single crystal copper foil

A technology of copper foil and single crystal, which is applied in the field of static preparation of large-area single crystal copper foil, can solve the problems of complicated process and equipment, and achieve the effect of convenient large area, simple process and high single crystal degree

Active Publication Date: 2020-10-16
BEIJING GRAPHENE INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 2. Cut one end of the copper foil into a tip, and then dynamically anneal the copper foil; this method can prepare a large-area copper foil single crystal, but the annealing furnace device needs winding and mechanical transmission devices, and at the same time introduces mechanical traction to the copper foil In addition, there are special requirements for the shape of the tip of the copper foil. On the whole, the process and device of this method are relatively complicated;

Method used

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  • A kind of preparation method of single crystal copper foil
  • A kind of preparation method of single crystal copper foil
  • A kind of preparation method of single crystal copper foil

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preparation example Construction

[0057] A method for preparing a single crystal copper foil according to an embodiment of the present invention includes the following steps:

[0058] S1: placing the polycrystalline copper foil on the carrier;

[0059] S2: placing the carrier with the copper foil in the annealing furnace;

[0060] S3: Raise the temperature of the annealing furnace to the specified temperature to form an annealing area with multiple temperature zones, and perform high-temperature annealing on the polycrystalline copper foil;

[0061] S3: cooling the annealing furnace to room temperature to obtain a single crystal copper foil sample.

[0062] According to the method of one embodiment of the present invention, by configuring multiple carriers, multiple pieces of polycrystalline copper foil can be annealed at one time, so as to achieve static preparation of single crystal copper foil in batches.

[0063] The method of this embodiment has no specific requirements on the shape of the polycrystalli...

Embodiment 1 3

[0067] Example 1 Annealing in a three-temperature zone annealing furnace to obtain a monolithic single crystal copper foil

[0068] In this embodiment, the annealing furnace used is a three-temperature zone annealing furnace. The length of each temperature zone is 20cm. The temperature settings of the three temperature zones are: 1020°C, 1000°C, 980°C. The specific steps are:

[0069] (1) Cut a single piece of industrial copper foil into a length of 40 cm, place it on a copper foil carrier, and place the copper foil carrier in an annealing furnace so that the copper foil is in three temperature zones;

[0070] (2) Turn on the mechanical pump to evacuate the annealing furnace, and then feed 500 sccm hydrogen;

[0071] (3) Raise the temperature of the three temperature zones of the annealing furnace to the set temperature: 1020°C, 1000°C, 980°C;

[0072] (4) Anneal the copper foil at the set temperature for 30 minutes;

[0073] (5) After the temperature of the annealing fur...

Embodiment 2 3

[0074] Example 2 Annealing in a three-temperature zone annealing furnace to obtain multiple batches of single crystal copper foil

[0075] In this embodiment, the annealing furnace used is a three-temperature zone annealing furnace. The length of each temperature zone is 20cm. The temperature settings of the three temperature zones are: 1020°C, 1000°C, 980°C. The specific steps are:

[0076] (1) Cut multiple pieces of industrial copper foil into 45cm long, place each piece of copper foil on a copper foil carrier, stack the copper foil carrier vertically, and then place it in an annealing furnace so that the copper foil is in three In the temperature zone;

[0077] (2) Turn on the mechanical pump to evacuate the annealing furnace, and then feed 500 sccm hydrogen;

[0078] (3) Raise the temperature of the three temperature zones of the annealing furnace to the set temperature: 1020°C, 1000°C, 980°C;

[0079] (4) Anneal the copper foil at the set temperature for 30 minutes; ...

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Abstract

The invention provides a preparation method of single crystal copper foil. The preparation method comprises the steps that polycrystalline copper foil is placed in an area with multiple temperature zones for annealing, and the single crystal copper foil is prepared; and in the area with the multiple temperature zones, the temperature difference between the adjacent temperature zones is 5-200 DEG C. According to the preparation method, the process is simple, and a cooper single crystal with large area, high single crystal degree and high flatness can be conveniently obtained.

Description

technical field [0001] The invention relates to the preparation of single-crystal copper foil, in particular to a method for statically preparing large-area single-crystal copper foil. Background technique [0002] Industrial rolled copper foil or electrolytic copper foil is often polycrystalline copper foil, and the existence of grain boundaries will affect its electrical and mechanical properties. Since there is no scattering of electrons by grain boundaries in single crystal copper foil, it has higher electrical conductivity; the single crystal copper (111) crystal plane can be used as a graphene growth substrate to achieve the same orientation epitaxial growth of graphene, thereby enabling Preparation of large-area single-crystal graphene samples. Therefore, there is a wide demand for the preparation of large-area single crystal copper foil. [0003] At present, the reported methods for preparing copper single crystals include: [0004] 1. Annealing at high temperatur...

Claims

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Application Information

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IPC IPC(8): C30B1/02C30B29/02
CPCC30B1/02C30B29/02
Inventor 刘忠范彭海琳李杨立志孙禄钊刘海洋王悦晨
Owner BEIJING GRAPHENE INST
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