Diffusion welding method for backplane and high-purity metal target
A diffusion welding and metal target technology, which is applied in welding equipment, metal processing equipment, non-electric welding equipment, etc., can solve difficult to meet process requirements, low recrystallization temperature of high-purity metals, and adverse effects of target electrical and thermal conductivity, etc. problems, to achieve the effect of easy industrialization and simple operation
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Embodiment 1
[0054] This embodiment provides a diffusion welding method for a backplane and a high-purity metal target, the backplane is a CuCr alloy backplane, the high-purity metal target is a copper target, and the method includes the following steps:
[0055] (1) Prepare the copper target material and the CuCr alloy back plate, and process threads on the welding surface of the CuCr alloy back plate;
[0056] (2) Combine the copper target material and the CuCr alloy back plate, and place the combined material in the metal sheath;
[0057] (3) Carry out degassing treatment to the metal sheath of packing composite material, then the metal sheath is sealed, and the vacuum degree of described degassing treatment is 1 * 10 -2 Pa, the temperature is 150°C, and the time is 3h;
[0058] (4) Place the sealed metal sheath in a cold isostatic press, boost the pressure to 250MPa, keep the pressure for 20min, and complete the cold isostatic pressing treatment after depressurization;
[0059] (5) C...
Embodiment 2
[0063] This embodiment provides a diffusion welding method for a backplane and a high-purity metal target, the backplane is a CuCr alloy backplane, the high-purity metal target is a copper target, and the method includes the following steps:
[0064] (1) Prepare the copper target material and the CuCr alloy back plate, and process threads on the welding surface of the CuCr alloy back plate;
[0065] (2) Combine the copper target material and the CuCr alloy back plate, and place the combined material in the metal sheath;
[0066] (3) Carry out degassing treatment to the metal sheath of packing composite material, then the metal sheath is sealed, and the vacuum degree of described degassing treatment is 1 * 10 -3 Pa, the temperature is 180°C, and the time is 2h;
[0067] (4) Place the sealed metal sheath in a cold isostatic press, increase the pressure to 240MPa, hold the pressure for 25min, and complete the cold isostatic pressing treatment after depressurization;
[0068] (5...
Embodiment 3
[0072] This embodiment provides a diffusion welding method for a backplane and a high-purity metal target, the backplane is a CuCr alloy backplane, the high-purity metal target is a copper target, and the method includes the following steps:
[0073] (1) Prepare the copper target material and the CuCr alloy back plate, and process threads on the welding surface of the CuCr alloy back plate;
[0074] (2) Combine the copper target material and the CuCr alloy back plate, and place the combined material in the metal sheath;
[0075] (3) Carry out degassing treatment to the metal sheath of packing composite material, then the metal sheath is sealed, and the vacuum degree of described degassing treatment is 5 * 10 -2 Pa, the temperature is 120°C, and the time is 4h;
[0076] (4) Place the sealed metal sheath in a cold isostatic press, increase the pressure to 270MPa, keep the pressure for 15min, and complete the cold isostatic pressing treatment after depressurization;
[0077] (5...
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