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Diffusion welding method for backplane and high-purity metal target

A diffusion welding and metal target technology, which is applied in welding equipment, metal processing equipment, non-electric welding equipment, etc., can solve difficult to meet process requirements, low recrystallization temperature of high-purity metals, and adverse effects of target electrical and thermal conductivity, etc. problems, to achieve the effect of easy industrialization and simple operation

Active Publication Date: 2021-07-13
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, part of the target material is made of high-purity metal, and the recrystallization temperature of high-purity metal is low. Below the recrystallization temperature of the metal, the commonly used method of diffusion welding is hot isostatic pressing. When the recrystallization temperature of high-purity metal is lower than the pressure of diffusion welding, it is difficult to meet the process requirements
[0008] However, when the pressure cannot reach the pressure required for diffusion welding, it is difficult for the thread to embed into the welding surface of the material with high hardness, which eventually causes holes on the welding surface. The appearance of holes reduces the contact area of ​​the welding surface, reduces the welding strength and welding bonding rate, At the same time, it has a negative impact on the electrical and thermal conductivity of the target.

Method used

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  • Diffusion welding method for backplane and high-purity metal target
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  • Diffusion welding method for backplane and high-purity metal target

Examples

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Effect test

Embodiment 1

[0054] This embodiment provides a diffusion welding method for a backplane and a high-purity metal target, the backplane is a CuCr alloy backplane, the high-purity metal target is a copper target, and the method includes the following steps:

[0055] (1) Prepare the copper target material and the CuCr alloy back plate, and process threads on the welding surface of the CuCr alloy back plate;

[0056] (2) Combine the copper target material and the CuCr alloy back plate, and place the combined material in the metal sheath;

[0057] (3) Carry out degassing treatment to the metal sheath of packing composite material, then the metal sheath is sealed, and the vacuum degree of described degassing treatment is 1 * 10 -2 Pa, the temperature is 150°C, and the time is 3h;

[0058] (4) Place the sealed metal sheath in a cold isostatic press, boost the pressure to 250MPa, keep the pressure for 20min, and complete the cold isostatic pressing treatment after depressurization;

[0059] (5) C...

Embodiment 2

[0063] This embodiment provides a diffusion welding method for a backplane and a high-purity metal target, the backplane is a CuCr alloy backplane, the high-purity metal target is a copper target, and the method includes the following steps:

[0064] (1) Prepare the copper target material and the CuCr alloy back plate, and process threads on the welding surface of the CuCr alloy back plate;

[0065] (2) Combine the copper target material and the CuCr alloy back plate, and place the combined material in the metal sheath;

[0066] (3) Carry out degassing treatment to the metal sheath of packing composite material, then the metal sheath is sealed, and the vacuum degree of described degassing treatment is 1 * 10 -3 Pa, the temperature is 180°C, and the time is 2h;

[0067] (4) Place the sealed metal sheath in a cold isostatic press, increase the pressure to 240MPa, hold the pressure for 25min, and complete the cold isostatic pressing treatment after depressurization;

[0068] (5...

Embodiment 3

[0072] This embodiment provides a diffusion welding method for a backplane and a high-purity metal target, the backplane is a CuCr alloy backplane, the high-purity metal target is a copper target, and the method includes the following steps:

[0073] (1) Prepare the copper target material and the CuCr alloy back plate, and process threads on the welding surface of the CuCr alloy back plate;

[0074] (2) Combine the copper target material and the CuCr alloy back plate, and place the combined material in the metal sheath;

[0075] (3) Carry out degassing treatment to the metal sheath of packing composite material, then the metal sheath is sealed, and the vacuum degree of described degassing treatment is 5 * 10 -2 Pa, the temperature is 120°C, and the time is 4h;

[0076] (4) Place the sealed metal sheath in a cold isostatic press, increase the pressure to 270MPa, keep the pressure for 15min, and complete the cold isostatic pressing treatment after depressurization;

[0077] (5...

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Abstract

The invention provides a method for diffusion welding of a back plate and a high-purity metal target. The diffusion welding method includes the following steps: preparing the high-purity metal target and the back plate, and processing threads on the welding surface of the back plate; High-purity metal target and back plate, and the combined material is placed in the metal sheath; the metal sheath loaded with the combined material is degassed, and then the metal sheath is sealed; the metal sheath after cold isostatic pressure sealing Sheath; hot isostatic pressing is performed on the metal sheath after cold isostatic pressing, and then cooled to room temperature; the metal sheath is removed to complete the diffusion welding of the back plate and the high-purity metal target. The invention overcomes the shortcoming that hot isostatic pressing cannot reach process pressure at low temperature by first performing cold isostatic pressing treatment on the combined material, and then performing hot isostatic pressing treatment, thereby ensuring the embedding effect of threads.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a welding method of a back plate and a target material, in particular to a diffusion welding method of a back plate and a high-purity metal target material. Background technique [0002] The target component is a common material in the magnetron sputtering process, wherein the target component is welded by the target and the back plate, and the welding method is usually the method of diffusion welding. [0003] Diffusion welding is a method commonly used in the prior art to weld targets. The principle of diffusion welding is to maintain a certain temperature and pressure for a period of time to make the atoms between the contact surfaces diffuse each other and form a joint welding method. [0004] CN 102430865A discloses a welding method for a target and a back plate, comprising: forming a plurality of dovetail grooves on the back of the target, forming a plurality of doveta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/02B23K20/14B23K20/24
CPCB23K20/026B23K20/14B23K20/24
Inventor 姚力军潘杰边逸军王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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