Thin film transistor device and preparation method thereof

Abstract

The invention provides a thin film transistor device and a preparation method thereof. The thin film transistor device comprises a substrate, an active layer, a gate insulating layer, a conductive layer and a gate layer. The preparation method of the thin film transistor includes a shading layer preparation step, a buffer layer preparation step, an active layer preparation step and a gate layer preparation step. The technical effects of the invention lie in that the conductive layer exists at all positions on the upper surface of the gate insulating layer, the corresponding active layer belowthe whole gate insulating layer is enabled to be controlled, the turn-on current of the thin film transistor device is increased, the electrical characteristics of the thin film transistor device areenhanced, and the display effect of the display device is improved.

Description

technical field [0001] The invention relates to the field of displays, in particular to a thin film transistor device and a preparation method thereof. Background technique [0002] Since a TFT (Thin Film Transistor, thin film transistor) with a top-gate structure has lower parasitic capacitance and better electrical characteristics, it is widely used in display devices. [0003] In the prior art, when fabricating a thin film transistor device TFT with a top-gate structure, since a self-alignment process between the gate Gate and the gate insulation pattern GI is used, the gate Gate is usually produced by a wet etching process, and the gate gate The insulating pattern GI is produced by a dry etching process. When the gate Gate is etched by a wet etching process, the etchant will etch a small distance under the photoresist, which causes the gate Gate The pole insulation pattern GI is short by a small distance, that is, the orthographic projections of the gate Gate and the ga...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that there is no gate layer at the edge of the upper surface of the gate insulating layer in the existing thin film transistor device, resulting in the unregulated edge of the active layer below the gate insulating layer, and the electrical characteristics of the thin film transistor device Technical problems such as poor display effect and poor display effect

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