A method and device for measuring energy band bending by photoelectron spectroscopy

Abstract

The invention discloses a method and a device for measuring energy band bending by photoelectron energy spectrum. The method includes: obtaining the core level photoelectron spectrum of the sample to be tested under N different photoelectron emission angles; N is an integer and N≥4; according to the theoretical relationship between the core level photoelectron spectrum and the corresponding photoelectron emission angle, the photoelectron The theoretical relationship between the emission angle and the corresponding integration depth and the core level photoelectron spectrum under different photoelectron emission angles respectively obtain the energy level values ​​corresponding to N different integration depths; the photoelectron emission angle corresponds to the integration depth one by one; according to the energy The theoretical relationship between the level value and the integration depth, the N integration depths and the energy level values ​​corresponding to each integration depth are fitted to obtain the surface core energy level; the surface core energy level is the corresponding core energy level when the integration depth is 0; according to The theoretical relationship between the energy band bending and the surface core energy level and the value of the surface core energy level can be used to obtain the size of the energy band bending of the sample to be tested. Thereby, the measurement accuracy of band bending can be improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor property measurement, and in particular to a method and device for measuring band bending using photoelectron spectroscopy. Background technique [0002] Band bending may refer to an equilibrium state in which potential energy is balanced by electron flow after two materials with different work functions and energy band structures are in contact, corresponding to a flat-band state. Two different semiconductor contacts, semiconductor and metal contact and semiconductor and electrolyte contact, etc. will form energy band bending. Band bending has a crucial impact on the performance of semiconductor devices. [0003] At present, there are mainly three kinds of equipment for measuring energy band bending, namely ultraviolet photoelectron spectroscopy, surface electrostatic potential atomic force microscope and X-ray photoelectron spectroscopy with fixed photoelectron emiss...

AI Technical Summary

Problems solved by technology

When the sample to be tested has energy band bending, the energy level position calculated from the peak position information will move due to different integration ranges, resulting in inaccurate measurement of the energy band bending

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