Giant dielectric thin film transistor

Abstract

The invention relates to a giant dielectric thin film transistor, which is provided with a grid electrode, a semiconductor and a gate insulating layer located between the grid electrode and the semiconductor layer, wherein the gate insulating layer adopts a giant dielectric material; the relative dielectric constant is greater than 10000 at the frequency of 1kHz when the giant dielectric materialis in a ceramic block state, and the relative dielectric constant is greater than 500 at the frequency of 1kHz when the giant dielectric material is in a thin film state; and the giant dielectric material is a non-ferroelectric ceramic material. Compared with a TFT adopting ionic double electric layer to serve as the gate insulating layer, the giant dielectric thin film transistor of the inventionhas the advantage of good frequency response, the frequency response of an inverter is greater than 500Hz, and the circuit is low in consumption, thereby having good application potential in the field of displays. Meanwhile, the giant dielectric thin film transistor of the invention is prepared by adopting the non-ferroelectric material, so that there is no hysteresis phenomenon.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a giant dielectric thin film transistor. Background technique [0002] The dielectric material used for the gate insulating layer of thin film transistors is usually SiO 2 (relative dielectric constant is about 3.9), SiNx (relative dielectric constant is about 7), etc., the dielectric constant is low, resulting in higher operating voltage and higher power consumption. In order to reduce the operating voltage and reduce power consumption, high-k dielectric materials (such as ZrO 2 、Al 2 o 3 , HfO 2 etc.) is a common practice, but the relative permittivity of these materials is usually lower than 50, and there is still a lot of room for improvement. Ferroelectric ceramic materials have a relative permittivity greater than 100, but since the ferroelectric material undergoes a ferroelectric-paraelectric phase transition at the Curie temperature, the dielectric cons...

AI Technical Summary

Problems solved by technology

Ferroelectric ceramic materials have a relative permittivity greater than 100, but since the ferroelectric material undergoes a ferroelectric-paraelectric phase transition at the Curie temperature, the dielectric constant of the ferroelectric material changes significantly with temperature, resulting in a temperature increase of the device. The stability becomes poor, which limits its application range; in addition, ferroelectric materials have hysteresis loops, which will cause instability of output current when used in thin film transistors

[0003] Recently, it has been reported that the electric double layer (EDL) is used as the gate insulating layer of TFT, and the permittivity can reach 1μF / cm 2 above, but due to the slow ion velocity, the frequency response frequency is only a few Hz

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