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Preparation method and application of bismuth molybdate/boron nitrogen doped graphene photoelectric functional material

A photoelectric functional material and application technology, applied in chemical instruments and methods, material electrochemical variables, molybdenum compounds, etc., can solve the problems of large instruments, complicated operation, time-consuming, etc., and achieve the effect of short cycle and simple synthesis process

Inactive Publication Date: 2019-08-16
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods can be used for the detection of LIN due to their high precision, but they all have some disadvantages, such as complex operations, time-consuming, large instruments, and low sensitivity

Method used

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  • Preparation method and application of bismuth molybdate/boron nitrogen doped graphene photoelectric functional material
  • Preparation method and application of bismuth molybdate/boron nitrogen doped graphene photoelectric functional material
  • Preparation method and application of bismuth molybdate/boron nitrogen doped graphene photoelectric functional material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) Bi 2 MoO 6 / Preparation of BNG Photoelectric Functional Materials

[0034] 0.2425 g of bismuth nitrate pentahydrate and 0.065 g of sodium molybdate dihydrate were respectively dissolved in 5 mL of ethanol solution and vigorously stirred at 60°C. Next, the sodium molybdate dihydrate solution was added dropwise to the bismuth nitrate pentahydrate solution under magnetic stirring and named solution A.

[0035]Then, 25 mg of graphene oxide powder and 100 mg of ammonium pentaborate were dispersed in 10 mL of ethanol solution to obtain a homogeneous solution and named solution B.

[0036] Afterwards, solution B was slowly added dropwise to solution A, and kept stirring for 1 h. Finally, the mixed solution was transferred to a stainless steel autoclave at 160 ° C for 24 hours; cooled to room temperature, centrifuged, washed with deionized water and ethanol three times each; after drying, Bi 2 MoO 6 / BNG photoelectric functional materials.

[0037] (2) Construction of...

Embodiment 2

[0047] (1) Bi 2 MoO 6 / Preparation of BNG Photoelectric Functional Materials

[0048] 0.2425 g of bismuth nitrate pentahydrate and 0.065 g of sodium molybdate dihydrate were respectively dissolved in 5 mL of ethanol solution and vigorously stirred at 40°C. Next, the sodium molybdate dihydrate solution was added dropwise to the bismuth nitrate pentahydrate solution under magnetic stirring and named solution A.

[0049] Then, 25 mg of graphene oxide powder and 100 mg of ammonium pentaborate were dispersed in 10 mL of ethanol solution to obtain a homogeneous solution and named solution B.

[0050] Afterwards, solution B was slowly added dropwise to solution A, and kept stirring for 0.5 h. Finally, the mixed solution was transferred to a stainless steel autoclave at 140 ° C for 20 h; cooled to room temperature, centrifuged, washed with deionized water and ethanol three times each; after drying, Bi 2 MoO 6 / BNG photoelectric functional materials.

[0051] (2) Construction of ...

Embodiment 3

[0056] (1) Bi 2 MoO 6 / Preparation of BNG Photoelectric Functional Materials

[0057] 0.2425 g of bismuth nitrate pentahydrate and 0.065 g of sodium molybdate dihydrate were respectively dissolved in 5 mL of ethanol solution and vigorously stirred at 80°C. Next, the sodium molybdate dihydrate solution was added dropwise to the bismuth nitrate pentahydrate solution under magnetic stirring and named solution A.

[0058] Then, 25 mg of graphene oxide powder and 100 mg of ammonium pentaborate were dispersed in 10 mL of ethanol solution to obtain a homogeneous solution and named solution B.

[0059] Afterwards, solution B was slowly added dropwise to solution A and kept stirring for 2 h. Finally, the mixed solution was transferred to a stainless steel autoclave at 180°C for 12 hours; cooled to room temperature, centrifuged, washed with deionized water and ethanol three times each; after drying, Bi 2 MoO 6 / BNG photoelectric functional materials.

[0060] (2) Construction of p...

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Abstract

The invention belongs to the field of preparation of electrochemical functional nano materials, and discloses a preparation method and application of a bismuth molybdate / boron nitrogen doped graphenephotoelectric functional material. Specifically, a simple and effective one-step solvothermal method is adopted to synthesize the bismuth molybdate nano particle loaded boron-nitrogen doped graphene nano sheet, and a photoelectrochemical sensor is constructed based on the photoelectric functional material. The prepared bismuth molybdate / boron nitrogen doped graphene photoelectric functional material demontrates excellent photoelectric performance, and the constructed photoelectrochemical sensor can be applied to the field of life analysis.

Description

technical field [0001] The invention belongs to the field of preparation of electrochemical functional nanometer materials, and relates to a simple and effective method for preparing bismuth molybdate nanoparticles loaded with boron-nitrogen-doped graphene nanosheets. Background technique [0002] Photoelectrochemical (PEC) sensors combine the advantages of electrochemical sensors and photoelectrochemistry, and the basic principle is based on the photoelectrochemical process. The photoelectrochemical sensor uses light as the excitation source and current as the detection signal, and detects and analyzes the photocurrent change of the photoelectric material caused by the electron transfer between the photoactive material and the target. In recent years, photoelectrochemical sensors have great application value in the fields of chemistry, biology, and environment due to their advantages of high sensitivity, simple device, and convenient operation. At present, the further deve...

Claims

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Application Information

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IPC IPC(8): G01N27/26C01G39/00
CPCC01G39/00G01N27/26
Inventor 王坤葛兰刘倩
Owner JIANGSU UNIV
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