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Production method of silicon carbide inorganic ceramic film

An inorganic ceramic membrane and production method technology, applied in chemical instruments and methods, membrane, membrane technology, etc., can solve the problems of high production cost, high processing and molding temperature, hindering market operation, etc., and achieve strong anti-pollution ability, The effect of high mechanical strength and reduction of overall production cost

Active Publication Date: 2019-08-16
HUBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, silicon carbide inorganic ceramic membranes are limited by the high cost of raw materials and the high processing temperature of 2800°C. The production cost has been high, which greatly hinders its market operation.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Hydrogen etching on the surface of silicon carbide powder:

[0025] Use 100μm silicon carbide powder to spread evenly to form a thin layer. Under vacuum environment, use 30L / min flow rate of hydrogen to perform hydrogen etching on the surface of silicon carbide powder to form a stepped array morphology with atomic level flatness s surface. The etching process is to etch at 1100°C for 30 minutes, and then heat up to 1300°C for 50 minutes.

[0026] 2) Generating a graphene thin layer on the surface of silicon carbide powder:

[0027] After the hydrogen etching on the surface of the silicon carbide powder is completed, the thermal breakage of the carbon-silicon bond is completed under vacuum protection conditions, so that the silicon atoms on the surface of the silicon carbide powder are desorbed from the surface before the sublimation of the carbon atoms, and the carbon atoms enriched on the surface occur Reconstructed to form a hexagonal honeycomb graphene film. Th...

Embodiment 2

[0038] 1) Hydrogen etching on the surface of silicon carbide powder:

[0039] Use 30μm silicon carbide powder to spread evenly to form a thin layer. Under vacuum environment, use 10L / min flow rate of hydrogen to perform hydrogen etching on the surface of silicon carbide powder to form a stepped array morphology with atomic level flatness s surface. The etching process is to etch at 1000°C for 30 minutes first, then heat up to 1150°C for 30 minutes, and finally heat up to 1300°C for 40 minutes.

[0040] 2) Generating a graphene thin layer on the surface of silicon carbide powder:

[0041]After the hydrogen etching on the surface of the silicon carbide powder is completed, the thermal breakage of the carbon-silicon bond is completed under the protection of argon, so that the silicon atoms on the surface of the silicon carbide powder are desorbed from the surface before the sublimation of the carbon atoms, and the carbon atoms enriched on the surface Remodeling occurs to form a...

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Abstract

The invention relates to a production method of a silicon carbide inorganic ceramic film, and the method comprises the following steps: (1) carrying out hydrogen etching on the surface of silicon carbide powder; (2) generating a graphene thin layer on the surface of the silicon carbide powder; (3) converting the generated graphene into graphene oxide; (4) swelling the generated graphene oxide; (5)molding the silicon carbide powder; (6) performing reduction and solidification of silicon carbide. The method takes the silicon carbide to epitaxially grow the graphene as a technical basis and provides an innovative silicon carbide inorganic ceramic film production process and method. The silicon carbide inorganic ceramic film prepared by the method has the advantages of small filtering aperture, high aperture distribution precision, good mechanical strength of the film body and high bending strength.

Description

technical field [0001] The invention relates to a production method of a silicon carbide inorganic ceramic film, in particular to an innovative silicon carbide inorganic ceramic film production process and method based on the technology of silicon carbide epitaxially grown graphene. Background technique [0002] Inorganic ceramic membrane is a unique type of separation membrane, with excellent stability, including high temperature resistance, chemical solvent resistance, strong anti-pollution ability; high mechanical strength, suitable for separation of high viscosity, high solid content and complex fluid materials ; Due to its narrow pore size distribution, the inorganic ceramic membrane adopts cross-flow filtration, which can significantly improve the separation efficiency of specific molecular weights; the service life of the inorganic ceramic membrane is 3 to 5 times that of the organic membrane. [0003] With the advancement of science and technology in recent years, th...

Claims

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Application Information

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IPC IPC(8): B01D67/00B01D71/02B01D69/02C04B35/565C04B35/628C04B35/622
CPCB01D67/0039B01D71/02B01D69/02C04B35/565C04B35/62834C04B35/62218B01D2325/22B01D2325/30B01D2325/24C04B2235/96
Inventor 万端极谢逾群刘德富李猷徐国念李祝常锋毅汪淑廉梅洪葛红梅
Owner HUBEI UNIV OF TECH
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